Radiation hardness of ZnO at low temperatures

Coşkun, C.; Look, David C.; Farlow, G. C.; Sizelove, J. R.

doi:10.1088/0268-1242/19/6/016

Cited by 121 publications

(58 citation statements)

References 12 publications

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“…[531][532][533][534][535] ZnO NW FETs were fabricated and irradiated with 35 MeV protons. 536 It was found that relatively low fluences in the range of ͑0.4-4͒ ϫ 10 12 protons/ cm 2 caused significant changes to the electrical characteristics of the FETs.…”

Section: B Implantation Of Compound Semiconductor Nwsmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

946

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Section: B Implantation Of Compound Semiconductor Nwsmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

946

591

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“…The apparent radiation hardness remains when the irradiation is performed at a low temperature of 130 K, 22 indicating that the primary irradiation-induced compensating defects are mobile already at those temperatures. The microscopic origin of the radiation hardness of ZnO is not, however, well understood.…”

Section: Introductionmentioning

confidence: 99%

Introduction and recovery of point defects in electron-irradiated ZnO

et al. 2005

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We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation ͑E el = 2 MeV, fluence 6 ϫ 10 17 cm −2 ͒ was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration ͓V Zn ͔Ӎc ion Ӎ 2 ϫ 10 16 cm −3 . The O vacancies are introduced at a 10-times-larger concentration ͓V O ͔Ӎ3 ϫ 10 17 cm −3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of E V,O m = 1.8± 0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies.

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“…[1][2][3][4] These properties, combined with other physical characteristics of ZnO such as the ability to grow single crystals, a low-power threshold for optical pumping, many possibilities for wet-chemical etching, and resistance to radiation damage, [1][2][3][4][5][6][7] further strengthen the device-based interest in this material. Important aspects of device fabrication include electrical isolation and selective-area doping, which are commonly achieved in the microelectronic industry by ion implantation.…”

mentioning

confidence: 97%

Thermal stability of ion-implanted ZnO

Coleman

Tan

Jagadish

et al. 2005

Applied Physics Letters

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Zinc oxide single crystals implanted at room temperature with high-dose (1.4×1017cm−2) 300 keV As+ ions are annealed at 1000–1200 °C. Damage recovery is studied by a combination of Rutherford backscattering/channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy. Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. This study shows that heavily damaged ZnO has relatively poor thermal stability compared to as-grown ZnO which is a significant result and has implications for understanding results on thermal annealing of ion-implanted ZnO.

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Radiation hardness of ZnO at low temperatures

Cited by 121 publications

References 12 publications

Ion and electron irradiation-induced effects in nanostructured materials

Ion and electron irradiation-induced effects in nanostructured materials

Introduction and recovery of point defects in electron-irradiated ZnO

Thermal stability of ion-implanted ZnO

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