Radiation Induced Behavior in MOS Devices

Емельянов, В. В.; Зебрев, Г. И.; Meshurov, O.V.; Sogoyan, A. V.; Useinov, Rustem G.

doi:10.1007/978-94-011-5008-8_29

Cited by 1 publication

(2 citation statements)

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“…Nevertheless, the equation (13) shows that the slope of logarithmic time dependence which can be determined immediately from experimental curve, does not provide information about effective thickness of trapped holes  . Procedure of renormalization excludes from consideration typically unobservable and poorly determined values of maximum and minimum tunneling times.…”

Section: Pulse Irradiationmentioning

confidence: 99%

“…Charged defects, located in the oxide bulk at distances greater than a few nanometers from the Si-SiO 2 interface may recharge only at very large times, and, thus, are usually treated as a fixed (i.e., gate bias-independent) positive oxide charge (Q ot ). The defects with the energy levels, located opposite to the silicon bandgap, are capable to reversibly exchange the carriers with the Si substrate, depending on the Fermi level position [12,13,14]. Such defects are traditionally referred to as interface traps, border traps, or switching states [15,16,17,18].…”

Section: Introductionmentioning

confidence: 99%

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Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators

Зебрев

Drosdetsky

2016

IEEE Trans. Nucl. Sci.

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-This paper is devoted mainly to mathematical aspects of modeling and simulation of tunnel relaxation of nonequilibrium charged oxide traps located at/near the interface insulator -conductive channel, for instance in irradiated MOS devices. The generic form of the tunnel annealing response function was derived from the rate equation for the charged defect buildup and annealing as a linear superposition of the responses of different defects with different time constants. Using this linear response function, a number of important practical problems are analyzed and discussed. Combined tunnel and thermal or RICN annealing, power-like temporal relaxation after a single ion strike into the gate oxide, are described in context of general approach.

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Section: Pulse Irradiationmentioning

confidence: 99%