Radiation Induced Change in Defect Density in ${\hbox {HfO}}_{2}$-Based MIM Capacitors

Miao, Bin; Mahapatra, Rajat; Jenkins, R. M.; Silvie, J.; Wright, N. G.; Horsfall, Alton B.

doi:10.1109/tns.2009.2015314

Cited by 25 publications

(13 citation statements)

References 26 publications

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“…These traps form percolation paths for electron tunneling and result in TAT current [30]. When this trap density associated with O-vacancies reaches a critical concentration ( cm [31]) at grain boundaries, TAT current can generate Joule-heating sufficient [10] to dissociate oxygen and lead to formation of a cone-shaped Hf-rich conducting filament with an electrical resistance corresponding to an ON state. During the reset process (positive voltage sweep), the high ohmic current flowing in the metallic conducting filament generates sufficient Joule-heating [10] at the narrowest tip of the Hf-rich filament-presumably adjacent to the electrode-to induce oxidation of the Hf and create a tunneling barrier [10], [33].…”

Section: Resultsmentioning

confidence: 99%

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Wang

Butcher

et al. 2012

IEEE Trans. Nucl. Sci.

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Resistive switching properties of valence change memory (VCM) resistive-random-access-memory (ReRAM) devices (TiN/HfO /TiN) are investigated after exposure to proton radiation with total ionizing doses (TID) of 1.5, 3, and 5 Grad(Si) and compared to similar measurements from electrochemical metallization memory (ECM) ReRAM devices (Pt/HfO :Cu/Cu). The TiN/HfO /TiN ReRAMs show significantly superior TID radiation-hardness compared to Pt/HfO :Cu/Cu ReRAMs: 1) All devices remained functional after radiation; 2) switching parameters including average , , , showed minimal or no degradation; and 3) TID radiation enhanced the uniformity of resistive switching among all VCM devices. The superior radiation responses of the VCM ReRAM devices relative to ECM ReRAMs result from the distinct conduction filament (CF) formation mechanisms. For the VCM ReRAM system, the radiation-induced vacancy density does not serve to inhibit the trap-assisted tunneling associated with the Hf-rich CF formation kinetics. On the contrary, vacancy-promoted charge trapping promotes VCM CF stability. In strong contrast, proton-induced vacancies for the ECM ReRAMs inhibit the formation of the metallic filament through internal field reduction due to charge trapping. The comparison of TID effects suggests that HfO -based VCM ReRAMs can be made radiation immune to a TID up to 5 Grad(Si) and may be highly suitable for rad-hard electronics applications.Index Terms-Hafnium oxide, rad-hard, resistive switching, total ionizing dose.

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Section: Resultsmentioning

confidence: 99%

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Wang

Butcher

et al. 2012

IEEE Trans. Nucl. Sci.

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“…The major challenges in such applications lie in the radiation-induced degradation of RRAM performance. Radiation sources in the outer aerospace and nuclear industries include X-ray and γ ray radiation, energetic electrons, protons, and heavy ion bombardment, etc., and they can bring displacement damages, radiation-induced charge trapping on oxide layers, radiation-induced tunneling leakage, soft breakdown, and hard breakdown [8-10]. Some studies have pointed out that a few kinds of RRAM materials have a good immunity to certain types of radiation, such as HfO 2 [11,12], TiO 2 [13,14], and Ta 2 O 5 [15,16], etc.…”

Section: Introductionmentioning

confidence: 99%

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device

et al. 2014

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The total ionizing dose (TID) effects of 60Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO x /Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance, resistance at high resistance state (HRS), and forming voltage were significantly impacted after radiation due to the radiation-induced holes. A novel hybrid filament model is proposed to explain the radiation effects, presuming that holes are co-operated with Ag ions to build filaments. In addition, the thermal coefficients of the resistivity in LRS can support this hybrid filament model. The Ag/AlO x /Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are highly suitable for radiation-hard electronics applications.

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“… b N T is extracted by the electrode polarization model , which implies oxygen vacancy defects and hopping carriers whose mobility is field dependent.…”

Section: Resultsmentioning

confidence: 99%

Performance of ultra‐thin HfO₂‐based MIM devices after oxygen modulation and post‐metallization annealing in N₂

Molina

Thamankar

Pey

2016

Physica Status Solidi (a)

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In this work, we discuss the electrical characteristics of metal–insulator–metal (MIM) structures based on ultra‐thin hafnium oxides whose stoichiometry have been modified and a thermal treatment after gate metallization has also been applied. Here, we show that the current–voltage characteristics are improved for the annealed samples in terms of lower gate leakage current densities and higher breakdown electric fields. In addition, the role of the modulation in the oxygen concentration for HfO2 on the MIM's current–voltage, capacitance–voltage, and resistive switching characteristics is also addressed. From these data, a trade‐off between current–voltage characteristics and basic memory performance is clearly seen, thus highlighting the importance of combining oxygen modulation and/or post‐metallization annealing in HfO2‐based MIM structures. Finally, the resistive switching effect is shown in the bipolar mode for some MIM structures and the dominant carrier conduction mechanism (just before the SET condition) is also obtained and related to Poole–Frenkel conduction.

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Radiation Induced Change in Defect Density in ${\hbox {HfO}}_{2}$-Based MIM Capacitors

Cited by 25 publications

References 26 publications

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device

Performance of ultra‐thin HfO₂‐based MIM devices after oxygen modulation and post‐metallization annealing in N₂

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Radiation Induced Change in Defect Density in ${\hbox {HfO}}_{2}$-Based MIM Capacitors

Cited by 25 publications

References 26 publications

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device

Performance of ultra‐thin HfO2‐based MIM devices after oxygen modulation and post‐metallization annealing in N2

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Performance of ultra‐thin HfO₂‐based MIM devices after oxygen modulation and post‐metallization annealing in N₂