Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO
                x
              /Pt RRAM device

Yuan, Fang; Zhang, Zhigang; Wang, Jer‐Chyi; Pan, Liyang; Xu, Jun; Lai, Chao−Sung

doi:10.1186/1556-276x-9-452

Cited by 37 publications

(21 citation statements)

References 22 publications

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“…The new artificial nociceptor can be readily extended to process other stimuli such as chemical, mechanical, optical, magnetic information. In addition to its promising potentials in normal robots due to its bio-realistic properties and scalability advantages over its CMOS counterpart, our memristor based nociceptor may also be suited for applications in outer space (e.g., next generation Mars Rover) or dangerous environment (e.g., cleanup of Fukushima Daiichi nuclear power plant) because of the proven radhard properties (lacking in CMOS) of memristors 65 – 67 .…”

Section: Discussionmentioning

confidence: 99%

An artificial nociceptor based on a diffusive memristor

et al. 2018

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A nociceptor is a critical and special receptor of a sensory neuron that is able to detect noxious stimulus and provide a rapid warning to the central nervous system to start the motor response in the human body and humanoid robotics. It differs from other common sensory receptors with its key features and functions, including the “no adaptation” and “sensitization” phenomena. In this study, we propose and experimentally demonstrate an artificial nociceptor based on a diffusive memristor with critical dynamics for the first time. Using this artificial nociceptor, we further built an artificial sensory alarm system to experimentally demonstrate the feasibility and simplicity of integrating such novel artificial nociceptor devices in artificial intelligence systems, such as humanoid robots.

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Section: Discussionmentioning

confidence: 99%

An artificial nociceptor based on a diffusive memristor

et al. 2018

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“…With two inert electrodes, neither metal ion migration nor oxygen vacancy migration occurred, which can cause RS failure in Pt-Pt devices (Lanza et al, 2019). The schematic of the mechanism of resistance change in the Ag-Ag planar RS device is shown in Figures 5C,D (Peng et al, 2013;Fang et al, 2014). The insulating PI separates the conductive silver in the initial state with no voltage.…”

Section: Discussionmentioning

confidence: 99%

Printable and Flexible Planar Silver Electrodes-Based Resistive Switching Sensory Array

Tian¹,

Luo²,

Fan³

et al. 2020

Front. Sens.

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With the advent of smart flexible electronic devices, new research directions have emerged. Among them, the resistive switching (RS) sensor has attracted much attention. The RS sensor converts the change of voltage signals into the change of resistance values. In this work, a planar flexible RS structure based on one-step printable silver electrodes was designed and fabricated to simplify device fabrication. The study is a starting point that paves the way for the development of all-in-one printable and flexible sensors in the future.

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“…Unlike a vast number of metal-oxide and chalcogenide ECM memories that report changes to HRS or pristine resistance states [95], [97], [98], [107], [118], [125], [127], [131], the SiC ECM cells showed no changes to any resistance states, nor conduction mechanisms, as seen in Fig. 12.…”

Section: Resistive Random Access Memorymentioning

confidence: 94%

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou

Morgan

Groot

2018

IEEE Trans. Electron Devices

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-From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.Index Terms-2-D semiconductor, carbon, CMOS, deep submicrometer, FinFET, graphene, MoS2, resistive random access memory (RRAM), silicon-on-insulator (SOI), thin film, total ionizing dose (TID), ultrathin buried oxide (UTBOX).

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Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device

Cited by 37 publications

References 22 publications

An artificial nociceptor based on a diffusive memristor

An artificial nociceptor based on a diffusive memristor

Printable and Flexible Planar Silver Electrodes-Based Resistive Switching Sensory Array

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

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