Radiation-induced defects in n-type GaN and InN

Emtsev, V. V.; Davydov, V. Yu.; Häller, E. E.; Klochikhin, A. A.; Kozlovskii, V. V.; Oganesyan, G. A.; Полоскин, Д.С.; Shmidt, N. M.; Vekshin, V. A.; Usikov, A. S.

doi:10.1016/s0921-4526(01)00650-0

Cited by 29 publications

(20 citation statements)

References 7 publications

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“…2b). This behavior correlates well with the effects observed in the proton-irradiated InN samples with initial electron concentrations of 2 × 10 19 cm −3 to 1 × 10 20 cm −3 [1]. However, the proton irradiation of InN layers with thicknesses of d = 0.6 µm and 1.0 µm revealed that the irradiation donor production rates differ sharply from each other (see Fig.…”

Section: Electrical Measurementssupporting

confidence: 85%

“…Our study of the proton irradiated InN has shown that the A 1 (LO) phonon line intensity and the plasmon-LO-phonon (P LP − ) coupled mode position in Raman spectra are dose-dependent. An increase in the A 1 (LO) line intensity points to the increase of the number of the irradiation defects, and the high-frequency shift of the P LP − mode is due to production of irradiation-induced defects also associated with a substantial increase in the electron concentration in the irradiated samples [1,4]. The last finding is in line with the Hall measurements, which indicates that the proton irradiation of InN leads to a rapid increase in the electron concentration.…”

Section: Samples and Experimentsmentioning

confidence: 99%

“…The information on the nature of these defects including the shallow donors responsible for high electrical conductivity of as-grown materials is lacking. A promising way of investigation of defects in InN is controllable production of point defects by irradiating degenerate n-InN with protons [1,2].…”

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confidence: 99%

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Effects of proton irradiation on electrical and optical properties of n‐InN

Emtsev

Davydov

Klochikhin

et al. 2007

Phys. Status Solidi (c)

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Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 − 5 × 10 18 cm −3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate nInN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.

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Section: Electrical Measurementssupporting

confidence: 85%

Section: Samples and Experimentsmentioning

confidence: 99%

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Effects of proton irradiation on electrical and optical properties of n‐InN

Emtsev

Davydov

Klochikhin

et al. 2007

Phys. Status Solidi (c)

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“…This is of course occurring for the larger doses as well, however, the generation of extended defects contributes to much larger effects on the AlGaN system, including alterations to local carrier density through introduction of non-compensated donors. 15,32 At higher doses, device properties tend to degrade, realized as higher gate leakage currents, reduced diffusion lengths, and increased activation energies. 28,33,34 For doses higher than 300 Gy, the value of L tended to decrease with increasing dose.…”

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confidence: 99%

Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors

Lee

Flitsiyan

Chernyak

et al. 2017

ECS J. Solid State Sci. Technol.

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The influence of various radiations on the performance and carrier transport properties of AlGaN/GaN HEMTs have been observed at length over the previous few decades. Gamma irradiation has been shown to have little influence on carrier density but has significant effects on device performance. The effects of gamma irradiation have proven non-monotonic in nature, dividing results into low and high doses with an inflection point near 300 Gy. Low doses of gamma irradiation have a tendency to improve device characteristics, while high doses lead to device degradation. The differences in low versus high doses are highlighted by electron beam induced current and dc characterizations. III-Nitride devices have long been an attractive solution to the ever-increasing high power and speed demands of industry. Of note, AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as a contender for these industrial applications investigated due to their high power and speed capabilities.1 Further, AlGaN/GaN HEMT devices do not require additional doping in contrast to AlGaAs/GaAs. Attention to AlGaN/GaN-based devices for potential space and military applications has incited numerous investigations into device radiation hardness.2 Particularly, the effects of high energy radiations on AlGaN/GaN HEMTs have been investigated, as well as p-i-n diodes for solar blind light detectors.Studies of radiation-induced defects in GaN-based devices have attracted significant interest, and much insight exists into the behavior of III-Nitride-based transistors after exposure to energetic ionizing radiation. Investigations of the radiation effects in AlGaN/GaN-based devices employing energetic protons have consistently reported that proton-irradiation results in a decrease in two-dimensional electron gas (2DEG) sheet carrier concentration and a positive threshold voltage shift with increasing proton dose.2-5 Negative threshold voltage shifts and increase in 2DEG sheet concentration have been observed in AlGaN/GaN HEMT structures exposed to 1-MeV neutron irradiation with doses up to 2.5 × 10 15 cm −2 . 6 In contrast to the behavior observed in proton-irradiated HEMTs, negative threshold voltage shifts are also observed in gamma-irradiated devices. 7-9Even at low altitudes, the fluences of high energy protons, electron, and photons may be non-negligible and depend on many factors including the local solar weather. 10 The interaction of highly energetic particles with matter tend to lead to the generation of secondary gamma radiation. Therefore, it becomes critical to interpret the effects of gamma radiation since it is found in low earth orbits and presents with other high energy radiation-matter interactions. Such investigation is very important not only from fundamental point of view, due to obtaining substantial information on the physical properties of semiconductor materials, but it also gives values of the device performance for application in radiation harsh environments.In recent years, the term gamma-ray has been conventionally de...

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“…There had been considerable effort to understand the nature of radiation defects in GaN-based heterojunctions. Most of these have been put in the electron and proton irradiation to the GaN material or devices [5][6][7][8][9][10][11]. Such irradiation mostly introduces relatively shallow electron traps near 0.07, 0.2, and 0.3 eV from the conduction-band edge in which the 0.07eV traps were identified as nitrogen vacancies [8].…”

mentioning

confidence: 99%

The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistors

Yang

Duan

et al. 2010

Phys. Status Solidi (c)

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The SiN‐passivated AlGaN/GaN high electron mobility transistors were investigated by 1MeV neutron irradiation at fluences up to 1015 cm‐2, yielding a significant degradation for the transconductance near the knee voltage and the reverse gate leakage current at fluences ranging from 1014 to 1015 cm‐2 which could be attributed to the irradiation induced mobility shift and the defects in SiN passivation layers respectively since no any recovery was found after 20 hour annealing at room temperature. Meanwhile the negligible degradation of the saturation drain current, the maximal transconductance and the threshold voltage gave the fact that the effectiveness of SiN layers in passivated surface states in the source‐gate spacer and gate‐drain spacer was undiminished by neutron irradiation. Moreover the ohmic contact was robustness to neutron since the sheet resistance of ohmic contact region hardly shifted, but the schottky characteristics degraded obviously. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Radiation-induced defects in n-type GaN and InN

Cited by 29 publications

References 7 publications

Effects of proton irradiation on electrical and optical properties of n‐InN

Effects of proton irradiation on electrical and optical properties of n‐InN

Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors

The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistors

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