Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.; Ghidini, G.

doi:10.1109/23.736457

Cited by 160 publications

(76 citation statements)

References 16 publications

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“…Another post-irradiation observed phenomenon is the occurrence of Quasi Breakdown (QB). The leakage current is higher than for RILC and in contrast to RILC can not be fitted by a F-N law [4]. The origin is related to the formation of large area conductive paths in the oxide, but not resulting in catastrophic breakdown.…”

Section: Gate Dielectricsmentioning

confidence: 96%

“…However, for a thickness below 6 nm the trapped holes immedately recombine with electrons tunneling from the substrate so that the net hole trapping is zero. [4][5]. Therefore, deep submicron CMOS technologies are expected to be inherently radiation hard for not too high total dose.…”

Section: Bulk Cmos Technologiesmentioning

confidence: 99%

“…Both mechanisms can occur simultaneously in the devices. A model has been developed to describe RILC as a function of several parameters such as oxide thickness, applied electrical field during irradiation and total dose and dose rate [4]. RILC is attributed to trap-assisted tunneling (TAT) via radiation-induced neutral electron traps (NET) It is important to remark that RILC is mostly only observed for a high total dose (in the Mrad(Si) range) so that it should be less a problem for space applications.…”

Section: Gate Dielectricsmentioning

confidence: 99%

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Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes

Claeys

Simoen

2004

Simulation of Semiconductor Processes and Devices 2004

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The paper first describes the basic radiation-induced mechanisms such as transient effects, ionization phenomena and displacement damage. Subsequently, the impact of irradiation on advanced CMOS technology nodes is demonstrated in order to illustrate the underlying physical phenomena. Both bulk and silicon-on-insulator (SOI) technologies will be addressed. A third section discusses the present understanding and the difficulties associated with modeling of irradiation-induced device degradation. Finally, an outlook is given for some emerging semiconductor technologies such as e.g. SiGe, strained silicon, Ge and GeOI. Some aspects of cryogenic irradiations, of key importance for space applications, are also briefly mentioned.

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Section: Gate Dielectricsmentioning

confidence: 96%

Section: Bulk Cmos Technologiesmentioning

confidence: 99%

Section: Gate Dielectricsmentioning

confidence: 99%

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Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes

Claeys

Simoen

2004

Simulation of Semiconductor Processes and Devices 2004

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“…It has been shown recently that high doses of ionizing radiation in thin oxides (40-60 Å) may cause Radiation Induced Leakage Current (RILC) [11]. The conduction mechanism in RILC (as well as in Stress Induced Leakage Current, SILC) has been attributed to neutral oxide defects, which mediate electron tunneling across the oxide [12]. Presently, characterization of radiation damage in Si/SiO 2 systems is usually accomplished with electrical methods such as capacitance-voltage (C-V) and current-voltage (I-V) measurements.…”

Section: Two-color Optical Technique For Characterization Of X-ray Ramentioning

confidence: 99%

Spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultra‐fast lasers

Jiang

Pasternak

Márka

et al. 2003

Physica Status Solidi (b)

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“…В случае КМОП−входного каскада входные токи определяются токами затво-ра входных МОП−транзисторов, и рост этих токов уже нельзя объяснить процессом встраивания по-верхностных состояний. В этом случае в качестве одной из возможных причин деградации может рассматриваться возникновение радиационно− индуцированного тока утечки [9,[21][22][23][24]. Однако данное предположение требует дальнейшего ис-следования.…”

Section: результаты и их обсуждениеunclassified