2003
DOI: 10.1063/1.1604182
|View full text |Cite
|
Sign up to set email alerts
|

Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon oxide–nitride-oxide stacks

Abstract: Articles you may be interested inStudy of strain fields caused by crystallization of boron doped amorphous silicon using scanning transmission electron microscopy convergent beam electron diffraction method Compositional analysis of ultrathin silicon oxynitride gate dielectrics by quantitative electron energy loss spectroscopy Appl.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
12
0

Year Published

2005
2005
2012
2012

Publication Types

Select...
5
1

Relationship

1
5

Authors

Journals

citations
Cited by 11 publications
(12 citation statements)
references
References 6 publications
0
12
0
Order By: Relevance
“…Oxynitride prepared by NH 3 nitridation would introduce a large amount of traps because of the hydrogen incorporation and the amount of nitrogen incorporation at high temperature (>1000°C) is still too low (<5%) [70,71,[85][86][87] to improve the j value. With the advantages of low hydrogen content and the selflimited low growth rate, N 2 O oxide permits a better control of film thickness and slightly increases the resistance to boron diffusion [88][89][90][91][92][93][94][95][96][97][98][99][100][101][102][103][104][105].…”
Section: The Prospect and Process Variantsmentioning
confidence: 99%
“…Oxynitride prepared by NH 3 nitridation would introduce a large amount of traps because of the hydrogen incorporation and the amount of nitrogen incorporation at high temperature (>1000°C) is still too low (<5%) [70,71,[85][86][87] to improve the j value. With the advantages of low hydrogen content and the selflimited low growth rate, N 2 O oxide permits a better control of film thickness and slightly increases the resistance to boron diffusion [88][89][90][91][92][93][94][95][96][97][98][99][100][101][102][103][104][105].…”
Section: The Prospect and Process Variantsmentioning
confidence: 99%
“…The nitrogen was due to the surface and high-k NH 3 anneals described above. Scans were performed in reverse direction to ensure that the segregation was not electron beam induced, as previously reported in the literature [30]. Very little nitrogen was detected in the high-k layer.…”
Section: Chemical Profiling Across Gate Stack Interfaces Experimentalmentioning
confidence: 99%
“…1,2 Memory effect is connected with trapping of electrons and holes at deep traps in the silicon nitride layer of ONO. [3][4][5][6][7][8][9][10][11][12][13][14] In this work we attempt to resolve this controversy through a specially designed set of experiments aimed to distinguish between different factors influencing nitrogen spatial distribution in ONO stacks. Degradation effects are much less pronounced for ONO with nitrided BOX.…”
Section: Introductionmentioning
confidence: 99%
“…10 It was suggested that nitrogen interacts with Si-Si bonds at the interface to form Si-N bonds or replaces oxygen or hydrogen. 12,13 A study performed by SIMS depth profile carried out from the backside of ONO stacks showed that there is no nitrogen at the Si/ SiO 2 interface, as seen from front side profiling. 12,13 A study performed by SIMS depth profile carried out from the backside of ONO stacks showed that there is no nitrogen at the Si/ SiO 2 interface, as seen from front side profiling.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation