Radiation performance of planar junctionless devices and junctionless SRAMs

Vinodhkumar, N.; Srinivasan, R.

doi:10.1007/s10825-015-0748-3

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Cited by 10 publications

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“…All these studies are done only in SOI based JLT devices. Only few studies are reported in bulk JLT devices in comparison with SOI JLT devices [15,16]. In this work, we explore the SEU performance of the bulk planar junctionless devices with various channel doping (N ch ) and silicon film thickness (T Si ).…”

Section: Introductionmentioning

confidence: 99%

SEU Performance Enhancement in BPJLT Devices by Channel Doping and Film Thickness

Vinodhkumar¹,

Raja²,

Addanki³

2019

IJITEE

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The bulk planar junctionless transistor (BPJLT) is a potential candidate for future CMOS technologies due to its CMOS compatibility and scalability. In this paper, the impact of silicon film thickness and channel doping on single-event upset (SEU) radiation performance of BPJLT based SRAMs is studied using TCAD simulations. The simulation results show that BPJLT devices having higher channel doping and smaller film thickness provides the better SEU performance.

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Section: Introductionmentioning

confidence: 99%