2023
DOI: 10.3390/ma16062202
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Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes

Abstract: We report on the effects of large-area 4H-SiC Schottky barrier diodes on the radiation response to ionizing particles. Two different diode areas were compared: 1 mm × 1 mm and 5 mm × 5 mm. 6LiF and 10B4C films, which were placed on top of the diodes, were used as thermal neutron converters. We achieved a thermal neutron efficiency of 5.02% with a 6LiF thermal neutron converter, which is one of the highest efficiencies reported to date. In addition, a temperature-dependent radiation response to alpha particles … Show more

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Cited by 3 publications
(12 citation statements)
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“…Figure 2. shows the response to alpha particles ( 241 Am source with a characteristic alpha particle maximum of 5.48 MeV) measured at different temperatures (200 -390 K) in a cryostat under a vacuum (<0.1 mbar) [33]. As seen in Figure 2, the peak maximum is shifted on the x-scale as the radiation temperature increases.…”
Section: Radiation Response To Alpha Particles and Neutronsmentioning
confidence: 99%
See 3 more Smart Citations
“…Figure 2. shows the response to alpha particles ( 241 Am source with a characteristic alpha particle maximum of 5.48 MeV) measured at different temperatures (200 -390 K) in a cryostat under a vacuum (<0.1 mbar) [33]. As seen in Figure 2, the peak maximum is shifted on the x-scale as the radiation temperature increases.…”
Section: Radiation Response To Alpha Particles and Neutronsmentioning
confidence: 99%
“…They have reported the highest energy resolution ever measured on SiC-based MOS detectors: 0.42% for 5.48 MeV alpha particles [32]. While most of the radiation tests are done at room temperature (RT), Bernat et al [33] have recently investigated the 4H-SiC SBDs radiation response to alpha particles at elevated temperatures in a vacuum. They have used n-type 4H-SiC SBDs with an active area of 25mm 2 .…”
Section: Radiation Response To Alpha Particles and Neutronsmentioning
confidence: 99%
See 2 more Smart Citations
“…GaN-based diodes have been widely used in ultraviolet light detection [1], high energy particle detection [2,3], preparation of nuclear batteries [4][5][6][7] because of their high radiation damage threshold, wide direct bandgap, high breakdown filed (3 × 10 7 V m −1 ) [6], and high electron mobility [8]. Generally, increasing the active area of the diodes is beneficial to increasing the output power of the diodes in the energy conversion system [9]. Unfortunately, the energy conversion efficiency often decreases rapidly as the device size increases.…”
Section: Introductionmentioning
confidence: 99%