Radiation robustness of normally-off GaN/HEMT power transistors (COTS)

Zerarka, Moustafa; Crépel, Olivier

doi:10.1016/j.microrel.2018.07.148

Cited by 18 publications

(9 citation statements)

References 14 publications

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“…The electrical signatures of those destructive events are similar to what has been observed under heavy ions in previous works [2]. It is worth noticing that with the laser testing conditions used in this work, no charge was directly generated in the dielectric layers.…”

Section: Destructive Eventssupporting

confidence: 84%

“…Note that a detailed root cause analysis of destructive events such as the one in Fig. 16 and its comparison with the failure analysis presented in [2] is made difficult by the large damaged areas. Still, those results demonstrate the possibility to trigger destructive events similar to those induced by heavy ions with laser charge injection.…”

Section: Destructive Eventsmentioning

confidence: 99%

“…ALLIUM nitride (GaN) high electron mobility transistors (HEMTs) have encountered significant interest for power applications in the recent years [1]. They can be used in highvoltage operation thanks to the wide band gap and the high critical electric field [2] of GaN with reduced power losses when compared to Si devices. Different commercial technologies and references of GaN HEMTs are now available on the market, the most common being Normally-Off HEMTs using GaN-on-Silicon substrate technologies [3].…”

Section: Introductionmentioning

confidence: 99%

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Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

Ngom

Pouget

Zerarka

et al. 2021

IEEE Trans. Nucl. Sci.

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We present backside laser testing of GaN power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is described. Two different kinds of transients are observed at the gate electrode and analyzed. The technique allows identifying the sensitive regions of the devices and generating destructive events.

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Section: Destructive Eventssupporting

confidence: 84%

Section: Destructive Eventsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

Ngom

Pouget

Zerarka

et al. 2021

IEEE Trans. Nucl. Sci.

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“…Additionally, some references [12,13] have shown that the DDD effect impacts the direct-current (DC) characteristics of the AlGaN/GaN HEMTs and the failure mechanisms have been basically studied. However, as one of the most important effects of space environment radiation, many studies focused on the enhancement-mode AlGaN/GaN HEMT based on the p-GaN structure [15][16][17]. The SEE characteristics and AlGaN/GaN HEMT failure mechanisms based on the cascode structure are not clear.…”

Section: Introductionmentioning

confidence: 99%

The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

et al. 2021

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An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

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“…Over the past years, commercial normally OFF GaN HEMTs have been tested against irradiation and the results are published in recent papers. The design and analysis are often performed for normally OFF commercial GaN HEMTs giving a very high resistance to displacement damage and ionizing effects, far outdoing that of commercial Si and SiC MOSFETs [4][5][6][7][8][9][10]. Furthermore, the conduction resistance in these wide band gap semiconductor devices is an order of magnitude lower than in silicon materials, without the corresponding increase in the gate capacitance.…”

Section: Introductionmentioning

confidence: 99%

Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications

et al. 2020

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This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bus converter (IBC) as part of a typical distributed power architecture used in a space power application. The results show that processing the power at greater frequencies is possible with a reduction in mass and without impacting the system efficiency. The proposed solution was experimentally validated by the implementation of a 1 MHz zero-voltage and zero-current switching (ZVZCS) current-fed half-bridge converter with synchronous rectification compared with the same converter using silicon as the standard technology on power switches and working at 100 kHz. In conclusion, the replacement of silicon (Si) transistors by GaN HEMTs is feasible, and GaN HEMTs are promising next-generation devices in the power electronics field and can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters. The best physical properties of GaN HEMTs, such as inherent radiation hardness, low on resistance and parasitic capacitances, allow them to switch at higher frequencies with high efficiency achieving higher power density. We present an optimized design procedure to guaranty the zero-voltage switching condition that enables the power density to be increased without a penalization of the efficiency.

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Radiation robustness of normally-off GaN/HEMT power transistors (COTS)

Cited by 18 publications

References 14 publications

Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications

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