Radiation testing of tantalum oxide-based resistive memory

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

“…With very thin switching layers, often between 10-100 nm, and a switching mechanism based on conductive filaments rather than control of charge density, RRAM cells can be considered radiation hard by process [91]- [101]. However, Fig.…”

“…In VCM, there are three main materials that have been the focus of research to date; TaO x , HfO x , and TiO x although some research into SiO x has also been conducted [92]- [94], [96], [99], [101]- [109]. Over the years, variations in radiation responses between different or even the same materials has been reported.…”

“…Despite this, two dependencies of radiation hardness on VCM cells are well known: 1) circuit set up and 2) oxide thickness [93], [101], [104], [115]- [117]. Thinner devices that are not left floating are thought to be the ideal set up in a radiation environment and can be used to select radiation tolerant designs.…”