2000
DOI: 10.1016/s0009-2614(00)01114-3
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Radiative and nonradiative lifetimes of band edge states and deep trap states of CdS nanoparticles determined by time-correlated single photon counting

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Cited by 92 publications
(55 citation statements)
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“…ns) than the exciton lifetime. 28 Generally, the surface of the particles plays an important role in the dynamic properties of semiconductor nanoparticles. The surface characteristics determine the radiative lifetime rather than the size and shape of the particle.…”
Section: +mentioning
confidence: 99%
“…ns) than the exciton lifetime. 28 Generally, the surface of the particles plays an important role in the dynamic properties of semiconductor nanoparticles. The surface characteristics determine the radiative lifetime rather than the size and shape of the particle.…”
Section: +mentioning
confidence: 99%
“…This confirms the previous observation that the exciton bleach signal is dominated by electrons rather than holes [27]. The slow and fast components are attributed to exciton recombination at the band edge [237,238] and electron transfer to the passivating ligands, respectively. [208,210] More detailed comparison between the exciton bleach recovery kinetics at these three peak wavelengths reveals a unique fast decay component at λ2 with a decay constant of τ4 ∼ 900 fs (Figure 3.3.b).…”
Section: Data Analysis and Exciton Dynamicssupporting
confidence: 91%
“…The emission spectra show the existence of few CdS NCs emitting at the bulk region (NCs diameter > 7 nm) with an emission peak close to 500 nm and FWHM ~32 nm (Figure 18b), while many areas exhibit a very broad emission with the peak around 550 nm (Figure 18b, blue line), representative of the trap states emission formed on the surface of the NCs. Indeed, the quality of the semiconductor NCs is generally studied by their emission characteristics verifying that the broader the emission spectra the higher the number of the trap states on their surfaces (Athanassiou et al 2007, Antoun et al 2007, Wu et al 2000, Khanna et al 2007. After irradiation with the same number of laser pulses but increased laser fluence (F=50 mJ·cm -2 , 80 pulses) the characteristic emission of the NCs in PMMA matrix is no more evident in the irradiated area, while the trap state emission is dominant (Figure 18c).…”
Section: Spatially Controlled In Situ Formation Of Cds Ncs In Polymersmentioning
confidence: 88%