Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons

Zhang, Xinyi; Dou, Kai; Hong, Qiang; Bałkanski, M.

doi:10.1103/physrevb.41.1376

Cited by 14 publications

(5 citation statements)

References 5 publications

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“…Both shallow donors and excitons in GaAs have a binding energy near 7 meV [31], in good agreement with the hydrogenic model. In GaP, the exciton binding energy is 21 meV [35], again close to the estimate from the hydrogenic model. In both semiconductors, the estimated binding energies for WBS are about three orders of magnitude less than the atomic value, which suggests that this state should be relatively easy to ionize thermally.…”

Section: Electronic Structure Of the Weakly Bound Muonium Statesupporting

confidence: 82%

Formation and dynamics of muonium centres in semiconductors—a new approach

Storchak¹,

Eshchenko²,

Brewer³

2004

J. Phys.: Condens. Matter

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Various processes of muonium atom formation in semiconductors via electron capture by a positive muon have been studied using µSR techniques, including those with applied electric field. Experiments in GaAs, GaP and CdS suggest that the electron is initially captured into a highly excited state, from which the cascade down to the muonium ground state goes through an intermediate weakly bound state determined by the electron effective mass and the dielectric constant of the host. The electronic structure of this weakly bound state is shown to be hydrogenic. The nature of the final (on the µSR timescale) muonium state depends on the energy releasing mechanisms in the cascade process. We suggest that muonium dynamics in semiconductors (including the effects of electric and magnetic fields and temperature) reflect the electron dynamics in weakly bound muonium state(s) in which the electron is delocalized over distances of about 100 Å.

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Section: Electronic Structure Of the Weakly Bound Muonium Statesupporting

confidence: 82%

Formation and dynamics of muonium centres in semiconductors—a new approach

Storchak¹,

Eshchenko²,

Brewer³

2004

J. Phys.: Condens. Matter

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“…The rate equations of the systems consisting of free carriers/excitons and bound excitons are expressed as follows [30]:…”

Section: Rate-equation Modelmentioning

confidence: 99%

Light-emitting silicon pn diodes

Dekorsy

Sun

Skorupa

et al. 2004

Applied Physics A: Materials Science & Processing

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We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which successfully describes the electrical and optical behaviour of the diodes at low temperatures. Especially, an electrical bistability observed below 50 K is shown to be based on the interplay of bound excitons, free excitons and free carriers in the active area of the diodes. The ionisation of bound excitons is the origin of an improved electroluminescence from the diodes at higher lattice temperatures.PACS 78.60.Fi; 78.55.Ap; 71.55.Cn

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“…For the development of GaPN alloy‐based IBSC devices, it is indispensable to understand the formation and properties of NRR centers and eliminate them during growth process. Several studies are already available on the N‐doped GaP system based on photoluminescence (PL), PL excitation (PLE) spectroscopy, [ 12 ] temperature‐dependent PL spectroscopy, [ 26–31 ] and time‐resolved PL (TRPL) studies. [ 32–35 ] On lower N concentration region, the PL spectrum of GaPN originates from discrete isoelectronic trap and NN i pairs (i.e., the average distance of N;

d_{normalN} \approx 3 nm

x = 0.028 %

).…”

Section: Introductionmentioning

confidence: 99%

Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence

Ferdous

Iwai

Kamata

et al. 2021

Physica Status Solidi (b)

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Presence and influence of nonradiative recombination (NRR) centers in an intermediate band (IB)‐type material, GaP1–xNx (x=0.75%), are studied by two‐wavelength excited photoluminescence (TWEPL) method and time‐resolved photoluminescence (TRPL) measurement at 77 K. With the use of below‐gap excitation (BGE) light in addition to an above‐gap excitation (AGE), the PL peak intensity is found to increase which indicates the presence of NRR centers and a secondary excitation from the IB to conduction band (CB). Depending on the effect of different BGE energies, an energy diagram on the distribution of NRR centers and NRR process is interpreted. The saturation of PL increase is attributed to the trap‐filling effect in NRR centers, which allows us to modify the rate equation. The NRR parameters are evaluated by a qualitative simulation of the modified rate equations of one‐level model together with the lifetime determined by TRPL. In continuation of evaluating NRR parameters by rate equation analysis, the addition of TRPL measurement improves accuracy and approaches the determination of NRR parameters. A successful characterization of NRR centers leads to a proper optimization of IB‐type solar cells (IBSCs).

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Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons

Cited by 14 publications

References 5 publications

Formation and dynamics of muonium centres in semiconductors—a new approach

Formation and dynamics of muonium centres in semiconductors—a new approach

Light-emitting silicon pn diodes

Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence

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