Radiative centers in layered semiconductor GaS doped with Zn

Characteristics of p-type Mg-doped GaS and GaSe nanosheets

“…It is well known that impurity states play an important role in the semiconducting optoelectronic devices. [17][18][19][20][21] Based on previous studies, Mg doping in a semiconductor is common in particular for GaN-based semiconductors to achieve p-type conductivity. 22,23 Moreover, the capability of achieving p-type doping in a GaN semiconductor has led to rapid development of the III-Nitride semiconductor light-emitting diodes (LED) technology by improving the internal quantum efficiency 24,25 and current injection efficiency in LEDs.…”

Radiative transitions of layered semiconductor GaS doped with P

“…The PL intensity of the PA emission band decreased after doping by P atoms. We have previously reported the existence of the PA emission band in the undoped sample [13]. PB and PC appeared at 2.35 and 2.12 eV.…”

Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge

“…The 1.23 eV emission band is attributed to the recombination of the donor-vacancy complex center. 9) The intensity of this PL band decreased after Ge doping. For the Ge-doped GaS samples, two emission bands denoted by PA and PB appeared at 2.30 and 1.96 eV, respectively.…”

“…We have reported that the 1.85, 1.95, 1.97, 2.002, 2.08, and 2.12 eV emission bands due to the complex centers of the doped impurities and vacancies are observed in the PL spectra of Zn, Cd, Cu, Mn, As, and P-doped GaS, respectively. [8][9][10][11][12][13] These emission bands have been explained on the basis of the recombination mechanism of the configurational coordinate model. Thus far, the radiative transitions in Ge-doped GaS have not yet been investigated.…”

“…Figure 2 shows the temperature dependences of the peak energies for the PA and PB emission bands. The variation of the indirect bandgap energy (E g ) of GaS as a function of temperature, calculated from the bound exciton peak energy, 9) is also indicated for comparison in the figure. The peak energy of the PA emission band changed with temperature at almost the same rate as E g , while that of the PB emission band changed at a large rate.…”