Radiative recombination in O2-doped n-type GaAs at low temperatures

Abstract

Band to band radiative recombination in O2‐doped n‐type GaAs has been investigated at 20.8 and 4.2 °K using photomagnetoelectric (PME) and photoconductive (PC) methods. Capture rates Br determined from the present experimental data are in excellent agreement with that computed from the Hall's direct radiative recombination formula [4]. The results are Br = 1.15 × 10−8 cm3/s at 20.8 °K and 1.23 × 10−7 cm3/s at 4.2 °K.