Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells

Abstract

We have studied the low-temperature optical emission spectra in a set of GaN/AlGaN multiple quantum wells with heavily Si-doped barriers. A careful analysis of the evolution of the emission lineshape with doping density suggests that the dominant recombination mechanism involves transitions between free two-dimensional (2D) electrons and non-equilibrium holes localized near the valence band edge. We propose a lineshape model, which is found to be in a good agreement with experimental spectra if the penetration of the barrier hole localization potential into the wells, the Burstein-Moss effect, and the band-gap renormalization are taken into account.

Magneto-optical study ofn-type modulation-dopedZnO/MgxZn1−xMakino1, Furuta2, Segawa3 et al. 2009Phys. Rev. B11140View full textAdd to dashboardCite

“…11,12 Modulation-doped III-nitride QWs have recently been produced and their physical properties have been studied in a number of experimental papers. [7][8][9][10][13][14][15] To date, optical properties of modulation-doped ZnO QWs have not been studied. 16 Polarization-sensitive magneto-optical study provides us with powerful information concerning the origin of photoluminescence ͑PL͒ because the doping-related transitions are known to be the issues of spin-sensitive photoexcitation.…”

“…Enhanced optical emission efficiency has been observed in these modulation-doped QWs, in which flat band conditions are established. [5][6][7][8][9][10] It is important to study on the interplay between the quantum-confined Stark and modulation-doping effects because it provides insight into the electronic structures of the quantized states in the QWs.…”

Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates

“…Arnaudov et al have studied low temperature PL of Al 0:07 Ga 0:93 N/GaN MQW's with heavily Si-doped barrier. 29) As increasing the doping concentration, they have observed blue-shift of PL peak and increase of FWHM tailing to low energy side. The PL peak shift is due to the interplay between band filling effect (inducing blue-shift) and band gap renormalization (inducing red-shift).…”

Modeling of the Light Emission Spectra of InGaN/GaN Quantum Well with Highly Doped Barriers

“…In this work, we model the light emission spectra at different excitation levels of thin InGaN epitaxial films embedded between two GaN layers -a single InGaN/GaN quantum well structure for green and blue light emitting diodes. We adopt the quantitative model of free electron recombination first created for degenerately doped 3D epitaxial films of direct-gap III-V semiconductors GaAs [3] and InAs [4] and later developed for GaN [5] and InN [6] as well as for the GaN QWs at low excitation [7]. The model predicts that the degenerate electrons recombine independently each one being influenced by the potential only in their nanoscale vicinity, canceling the k-conservation.…”

“…Later we developed the model for highly conducting GaN [5] and InN [6] where also a good coincidence with the electrical parameters of the samples was achieved. Assuming that the same recombination mechanism -of free electrons without k-conservation -predominates in the GaN and InGaN QWs, we apply the model qualitatively for the corresponding QWs with highly doped barriers at low [7] and high [8] excitation.…”