Morphological and optical properties of Si doped In0.07Ga0.93N multi-quantum-well (MQW) were studied on a vicinal bulk GaN(0001) substrate with low dislocation density. Surface morphology of InGaN MQW was sensitive to the misorientation direction due to the anisotropic step edge structure peculiar to a hexagonal crystal. Appropriate Si doping was useful to suppress instability of the step front and a well-aligned straight step structure was demonstrated for the misorientation direction of [11̄00] with Si doping of 5×1018 cm-3. Low temperature photoluminescence (PL) indicated that good luminescence properties were maintained under the wide range of doping concentration, while PL degradation was observed for heavily doped MQW's. The luminescence properties were discussed based on a self-consistent calculation of the electronic structure of Si-doped MQW's.

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