Step-bunching in (Al Ga1−)0.5In0.5P layers on misoriented (001) GaAs substrates grown by metalorganic vapor phase epitaxy

Gomyo, Akiko; Hotta, Hisato; Miyasaka, F.; Tada, K.; Fujii, Hiroaki; Fukagai, K.; Kobayashi, Kenji; Hino, Isao

doi:10.1016/0022-0248(94)91039-1

Cited by 22 publications

(4 citation statements)

References 7 publications

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“…Gomyo et al have observed tilted striations in AlInGaP samples grown on GaAs under certain growth conditions. 30,31 They also observe undulations in the film that they attribute to step-bunching. Using this evidence, they reason that since the adatom mobility of Al is much lower than In and Ga, Al should be uniformly distributed on terraces and steps whereas In and Ga adatoms, being more mobile, preferentially attach to steps.…”

Section: B Composition-modulationmentioning

confidence: 97%

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

Mukherjee

Beaton

Christian

et al. 2013

Journal of Applied Physics

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Articles you may be interested inEffects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates Direct-bandgap InAlP alloy has the potential to be an active material in nitride-free yellow-green and amber optoelectronics with applications in solid-state lighting, display devices, and multi-junction solar cells. We report on the growth of high-quality direct-bandgap InAlP on relaxed InGaAs graded buffers with low threading dislocation densities. Structural characterization reveals phase-separated microstructures in these films which have an impact on the luminescence spectrum. While similar to InGaP in many ways, the greater tendency for phase separation in InAlP leads to the simultaneous occurrence of compositional inhomogeneity and CuPt-B ordering. Mechanisms connecting these two structural parameters are presented as well as results on the effect of silicon and zinc dopants on homogenizing the microstructure. Spontaneous formation of tilted planes of phase-separated material, with alternating degrees of ordering, is observed when InAlP is grown on vicinal substrates. The photoluminescence peak-widths of these films are actually narrower than those grown on exact (001) substrates. We find that, despite phase-separation, ordered direct-bandgap InAlP is a suitable material for optoelectronics. V C 2013 AIP Publishing LLC.

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Section: B Composition-modulationmentioning

confidence: 97%

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

Mukherjee

Beaton

Christian

et al. 2013

Journal of Applied Physics

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“…One substrate was misoriented from ͑001͒ by 6°to ͑111͒A and the other was miscut by 6°to ͑111͒B, hereafter referred to as samples A and B. 12 BEEM images show regions of enhanced and reduced current that correlate with the ridge structures. Low temperature photoluminescence ͑PL͒ spectroscopy was used to characterize the optical band gap of the GaInP.…”

mentioning

confidence: 99%

Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy

O'Shea

Reaves

DenBaars

et al. 1996

Applied Physics Letters

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Ordered-GaInP/GaAs heterostructures have been studied using ballistic-electron-emission microscopy (BEEM). The GaInP/GaAs conduction band offset was found to decrease with increasing order. Samples were grown simultaneously on different misoriented substrates to vary the degree of order in the GaInP. Concurrent scanning tunneling microscopy and BEEM images show ridge structures in the topography and contrast in the BEEM current that may correspond to ordered domains in the GaInP. Room temperature conduction band offsets of 137 and 86 meV were measured using BEEM spectroscopy for GaInP with 2 K band gaps of 1.97 and 1.89 eV, respectively.

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“…High-angle annular dark-field detector (HAADF)-STEM analysis of this layer showed a 2 atomic percent reduction in indium, possibly due to desorption. The TEM contrast provided by the desorption of indium acted as a marker layer and showed the evolution of the growth-surface from planar (bottom interface) to rough (top-interface) due to step-bunching in vicinal AlGaInP at 650 C. 20 The HRTEM images of the same structures showed single-variant ordering with a well-defined order-disorder interface achieved via the growth-temperature variation. However, weak ordering was seen in some areas of the barrier layer indicating that future barrier-layer growths must be performed at even higher temperatures to completely disorder the material.…”

mentioning

confidence: 96%

Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures

Mukherjee

Deotare

Fitzgerald

2015

Applied Physics Letters

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Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum wellA set of nominally undoped CuPt-B type ordered (Al x Ga 1Àx ) 0.5 In 0.5 P quantum-wells with disordered (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P barriers were grown and characterized using transmission electron microscopy and photoluminescence spectroscopy. Such structures are potentially beneficial for light emitting devices due to the possibility of greater carrier confinement, reduced scattering into the indirect valleys, and band-offset adjustment beyond what is possible with strain and composition. Furthermore, the possibility of independently tuning the composition and the order-parameter of the quantum-well allows for the decoupling of the carrier confinement and the aluminum content and aids in the identification of carrier loss mechanisms. In this study, sharp order-disorder interfaces were achieved via the control of growth temperature between 650 C and 750 C using growth pauses. Improved high-temperature (400 K) photoluminescence intensity was obtained from quantum-wells with ordered Ga 0.5 In 0.5 P as compared to disordered Ga 0.5 In 0.5 P due to greater confinement. Additionally, in the ordered samples with a higher Al/Ga ratio to counter the band-gap reduction, the photoluminescence intensity at high temperature was as bright as that from conventional disordered heterostructures and had slightly improved wavelength stability. Room-temperature time-resolved luminescence measurements indicated a longer radiative lifetime in the ordered quantum-well with reduced scattering into the barrier. These results show that in samples of good material quality, the property controlling the luminescence intensity is the carrier confinement and not the presence of ordering or the aluminum content. V C 2015 AIP Publishing LLC. [http://dx.

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Step-bunching in (Al Ga1−)0.5In0.5P layers on misoriented (001) GaAs substrates grown by metalorganic vapor phase epitaxy

Cited by 22 publications

References 7 publications

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy

Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures

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