Low-threshold, highly reliable 630 nm-band AlGaIPvisible laser diodes with AlInP buried waveguide

Kobayashi, Ryuji; Hotta, Hisato; Miyasaka, F.; Hara, K.; Kobayashi, Kenichi

doi:10.1049/el:19960605

Cited by 13 publications

(3 citation statements)

References 5 publications

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“…Monochromatic laser light offers the largest available color saturation, but the wavelengths require a trade-off with the eye responsivity. Especially for red-emitting lasers the efficiency strongly depends on the wavelength [2,3,4,5]. It has been shown that for the red color diode lasers the optimum wavelength is in the region between 630 nm and 640 nm [6,7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

High luminance tapered diode lasers for flying-spot display applications

et al. 2012

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Flying-spot display applications require high luminance (> 100 TCd/m²) red-emitting lasers. High luminance is defined as a high optical output power and a nearly diffraction limited beam quality at a wavelength with a good visibility of the human eye. Diode lasers, with all their beneficial properties such as direct modulation capability, small size and good electro-optical efficiency, are so far unable to achieve such high luminance, due to catastrophic optical mirror damage (COMD) caused by high facet loads.We will present tapered diode lasers emitting near 635 nm with a larger vertical waveguide to lower the facet load and to alleviate the COMD risk. The lateral structure consists of an index-guided ridge waveguide section for lateral mode filtering, and a gain-guided tapered section for the amplification of radiation and a further reduction of the facet load. The tapered lasers are mounted p-side down on diamond heat spreaders and on copper heat sinks.We achieved an optical output power of 1.1 W at 636 nm at a laser temperature of 5°C. The emitted beam has a nearly diffraction limited (M 2 1/e² < 2) central lobe with a high power content (P CL > 75%). At 636 nm the eye sensitivity is 142 lm/W according to the CIE 1931 photopic eye response curve (v λ ). Hence, we achieved a luminous flux of > 100 lm and a luminosity of 150 TCd/m², thus taking a first step towards diode-laser-based flying-spot displays.

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Section: Introductionmentioning

confidence: 99%

High luminance tapered diode lasers for flying-spot display applications

et al. 2012

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“…Second, the regrown In 0.5 Al 0.5 P layers with larger band gap form the real index-guiding structure and reduce internal loss. Last, this buried tunnel junction laser requires only one step regrowth compared to the two step regrowth reported by Kobayashi et al 3,4 In the present work, the n-type In 0.5 Al 0.5 P layers that serve as lateral optical guiding can be regrown directly after the formation of laser ridges by conventional MOCVD. The buried tunnel junctions located on top of the laser ridges serve as window areas and assist current flowing from p-type cladding layers to n-type In 0.5 Al 0.5 P layers and then to top n-contact layers.…”

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confidence: 75%

“…However, it has been difficult to selectively grow In 0.5 Al 0.5 P layers by conventional metalorganic chemical vapor deposition ͑MOCVD͒. Kobayashi et al reported real index-guided InGaAlP lasers grown by HCl-assisted MOCVD, 3,4 in which the In 0.5 Al 0.5 P layers was selectively regrown. Imafuji et al reported a real refractive index-guided self-aligned structure by regrowning the InGaAlP laser ridges.…”

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Realization of real index-guided InGaAlP red lasers with buried tunnel junctions

Wang

Shieh³

Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges

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650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer

Xia

et al. 2006

Optoelectron. Lett.

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650 nm AIGalnP/GalnP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth. The threshold current is 6.4 mA,at 40 mA OW operation ,the fundamental transverse-mode still remains, and the output power and the slope efficiency can reach 34 mW and 1.1 mW/mA respectively. The dead output power in OW operation can reach 66 mW at a saturation current of 88 mA. During 200 h burn in test, the laser diodes show good stabilization with a degradation of less than 8 %. CLC number.TN248.4 Document code:A Article ID:1673ID: -1905ID: (2006 Red laser diodes based on semiconductor material GaInP/A1GaInP have been extensively studied over the last ten years. It brings great commercial opportunities because of their super advantages, such as low power consumption, direct modulation, small size, reduced weight, high efficience, high reliability and etc. It is widely applied to laser pointer, DVD system, bar code scanner, industry measurement, and medical treatment E1' 27 . In addition,an emerging application to red laser diodes is in plastic optical fiber communication. It is very competitive to use them in short range fiber networks because of their low cost and long lifespan. Red laser diodes, used in hand pointer and industry measurement and powered by batteries, especially require low operating current.Compared with A1GaAs and InGaAsP material, The GaInP/A1GaInP semiconductor laser has two big problems: first, for the freed excitonic photons,it is very difficult to be constrained within the active layer of smaller conduction band offset, which mainly depends upon the laser characters, such as threshold current and output power. Furthermore, with poor heat dissipation, A1-GaInP material is hard to be operated at very high temperature.Generally,lasers with visible light and good performance are fabricated by multi-growth of metal-organic chemical vapor deposition E3-~j. However, the multigrowth would result in more complex factor and increased cost. Also the n-type blocking layer would increase threshold current and decrease slope efficiency due to the optical loss. In this letter, we fabricated the GaInP/A1GaInP semiconductor laser with compressively strained MQW active layer by single growth , at the * E-mail: xiaw@sdu, edu, cn same time, we optimized the growth condition, and implemented the cladding layer with high A1 composition and high p-type doping level. The fabricated laser diodes demonstrate the lowest threshold current of 6.4 mA at 652.4 nm compared with any ever reported, with more than 30 mW power output at room temperature by remaining fundamental transverse-mode. The structure of compressively strained multiple quantum-well laser was grown by low-pressure MOCVD which is made by EMCORE of America. The reactor is capable of growing six 2-inch wafers per run. The alkyl sources are trimethylgallium (TMGa), trimethylaluminum (TMA1) and trimethylindium (TMIn). The V group gases used are AsH3 and PH3 ;and the doping sources are Cpz Mg for the p-type la...

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Low-threshold, highly reliable 630 nm-band AlGaIPvisible laser diodes with AlInP buried waveguide

Cited by 13 publications

References 5 publications

High luminance tapered diode lasers for flying-spot display applications

High luminance tapered diode lasers for flying-spot display applications

Realization of real index-guided InGaAlP red lasers with buried tunnel junctions

650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer

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