Radical‐Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine‐Adducted Silver Carboxylates

Niskanen, Antti; Hatanpää, Timo; Arstila, Kai; Leskelä, Markku; Ritala, Mikko

doi:10.1002/cvde.200606519

Cited by 68 publications

(48 citation statements)

References 50 publications

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“…For instance, for ALD of metal oxides with O 2 plasmas, ϳ100% conformality has been reached for Al 2 O 3 in pores with AR = 8, 21 for TiO 2 deposition in trenches with AR = 9, 16,22 and for Ta 2 O 5 in trenches with AR = 11. 23 Regarding H 2 plasmas used for ALD of metals and metal nitrides, Ͼ95% step coverage for TiN in pores with AR = 10 has been reported; 24 ϳ100% for TaN in pores with AR = 10, 25 ϳ100% conformality for Cu in trenches with AR = 9, 26 as well as conformal growth for Ag in trenches with AR = 9 27 were also reported. For ALD of Ta with a H 2 plasma, ϳ100% conformality was found up to trenches with AR = 15, whereas the rest of the trench ͑AR = 40͒ had a conformality of 40%.…”

Section: Plasma-assisted Aldmentioning

confidence: 99%

Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

Knoops

Langereis

Sanden

et al. 2010

J. Electrochem. Soc.

173

116

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. For plasma-assisted atomic layer deposition ͑ALD͒, reaching conformal deposition in high aspect ratio structures is less straightforward than for thermal ALD due to surface recombination loss of plasma radicals. To obtain a detailed insight into the consequences of this additional radical loss, the physical processes in plasma-assisted ALD affecting conformality were identified and investigated through Monte Carlo simulations. The conformality was dictated by the recombination probability r, the reaction probability s, and the diffusion rate of particles. When recombination losses play a role, the saturation dose depended strongly on the value of r. For the deposition profiles, a minimum at the bottom of trench structures was observed ͑before reaching saturation͒, which was more pronounced with larger values of r. In turn, three deposition regimes could be identified, i.e., a reaction-limited regime, a diffusion-limited regime, and a new regime that is recombination-limited. For low values of r, conformal deposition in high aspect ratio structures can still be achieved, as observed for several metal oxides, even for aspect ratios as large as 30. For high surface recombination loss probabilities, as appears to be the case for many metals, achieving a reasonable conformality becomes challenging, especially for aspect ratios Ͼ10.

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Section: Plasma-assisted Aldmentioning

confidence: 99%

Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

Knoops

Langereis

Sanden

et al. 2010

J. Electrochem. Soc.

173

116

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“…Only recently, atmospheric pressure plasmas have been used in (spatial) ALD of oxides. 11,12 In this paper, we demonstrate for the first time spatial atmospheric plasma enhanced ALD of silver films from Ag(fod)(PEt 3 ), triethylphosphine (6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate) silver(I), and an N 2 -H 2 plasma. This process combination allows us to accurately control film morphology at processing speeds up to 0.8 nm/min for all atmospheric conditions compared to a maximum of 0.15 nm/min as reported by Kariniemi et al for the case of conventional plasma-enhanced ALD.…”

Section: Introductionmentioning

confidence: 88%

“…4,5 Yet, plasmas used in conventional plasma enhanced (PE-)ALD are typically low-pressure plasmas that can contain quite different physicochemical species than those at atmospheric pressures. In the past 20 years, the number of publications about atmospheric plasma-enhanced deposition has grown explosively as pointed out in a recent review by Merche et al 7 So far, only a few studies on PE-ALD of silver have been published, 4,5,[8][9][10] all of them involving conventional ALD using a remote low-pressure plasma source. Only recently, atmospheric pressure plasmas have been used in (spatial) ALD of oxides.…”

Section: Introductionmentioning

confidence: 99%

Atmospheric pressure plasma enhanced spatial ALD of silver

Bruele

Smets

Illiberi

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18 lX cm and C-and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100-120 C. V C 2014 American Vacuum Society.

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“…The ALD technique is also used for obtaining a thin smooth silver film [71]. This technique is extremely limited due to the narrow temperature window of a maximum 20° and the difficulty in obtaining suitable precursors.…”

Section: Silver Thin Filmsmentioning

confidence: 99%

Ultra-thin films for plasmonics: a technology overview

Malureanu

Lavrinenko

2015

Nanotechnology Reviews

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Ultra-thin films with low surface roughness that support surface plasmon-polaritons in the infra-red and visible ranges are needed in order to improve the performance of devices based on the manipulation of plasmon propagation. Increasing amount of efforts is made in order not only to improve the quality of the deposited layers but also to diminish their thickness and to find new materials that could be used in this field. In this review, we consider various thin films used in the field of plasmonics and metamaterials in the visible and IR range. We focus our presentation on technological issues of their deposition and reported characterization of film plasmonic performance.

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Radical‐Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine‐Adducted Silver Carboxylates

Cited by 68 publications

References 50 publications

Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

Atmospheric pressure plasma enhanced spatial ALD of silver

Ultra-thin films for plasmonics: a technology overview

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