Radical-enhanced atomic layer deposition of Y2O3 via a β-diketonate precursor and O radicals

Van, Trinh Tu; Chang, Jane P.

doi:10.1016/j.susc.2005.08.019

Cited by 37 publications

(14 citation statements)

References 35 publications

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“…A previous study of MOCVD-grown Y 2 O 3 using Y(TMHD) 3 precursors yielded C as high as 24 at.%, which could be reduced to 4% by increasing the substrate temperature. 18 With our Zn(TMHD) precursors, we normally observe 11-34 at.% C on the "as-grown" surfaces, as expected, due to adsorption of adventitious C during air exposure. The significant drop in C after sputtering to below 1 at.% without using the aforementioned strategy of increasing the substrate temperature clearly indicates cleaner decomposition of Zn(TMHD) 2 using the wurtzite hexagonal structure with a latent heat of vaporization of 3.61 eV/atom and found that the (001) plane has the lowest surface energy.…”

Section: Lower Carbon In Their Case Was a Results Of A Cyclic Six-centsupporting

confidence: 73%

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

et al. 2007

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Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(TMHD) 2 ] is a relatively uninvestigated precursor that was used in this work to grow highly c-axis-oriented ZnO films on Si(100). X-ray photoelectron spectroscopy studies before and after Ar ion sputtering indicated that surface carbon on several samples was reduced from as much as 34 at.% to much less than 1 at.% within the first 5 nm, indicating very clean Zn(TMHD) 2 precursor decomposition. Microstructural and compositional analysis revealed columnar ZnO grains with domain widths of approximately half the total film thickness and a Zn-to-O atomic percent ratio indicative of stoichometric ZnO.

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Section: Lower Carbon In Their Case Was a Results Of A Cyclic Six-centsupporting

confidence: 73%

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

et al. 2007

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“…31,32 In this work, Yb 2 O 3 growth using Yb(TMHD) 3 precursor was confirmed to behave similarly to the Y 2 O 3 and Er 2 O 3 analogs. Figure 1(a) shows the XPS spectrum for Yb 2 O 3 thin film deposited using Yb(TMHD) 3 and atomic oxygen.…”

Section: Resultssupporting

confidence: 55%

“…31,32 Thin films of Yb 3þ and Er 3þ codoped Y 2 O 3 were deposited on Si (100) substrates at 350 C using RE-ALD. A 3 array doser enabled the injection of 3 precursors without cross contamination.…”

Section: Methodsmentioning

confidence: 99%

The effects of energy transfer on the Er3+ 1.54 μm luminescence in nanostructured Y2O3 thin films with heterogeneously distributed Yb3+ and Er3+ codopants

Hoang

Schwartz

Wang

et al. 2012

Journal of Applied Physics

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Articles you may be interested inLuminescence thermometry below room temperature via up-conversion emission of Y2O3:Yb3+,Er3+ nanophosphors J.We report the effects of heterogeneous Yb 3þ and Er 3þ codoping in Y 2 O 3 thin films on the 1535 nm luminescence. Yb 3þ :Er 3þ :Y 2 O 3 thin films were deposited using sequential radical enhanced atomic layer deposition. The Yb 3þ energy transfer was investigated for indirect and direct excitation of the Yb 2 F 7/2 state using 488 nm and 976 nm sources, respectively, and the trends were described in terms of Forster and Dexter's resonant energy transfer theory and a macroscopic rate equation formalism. The addition of 11 at. % Yb resulted in an increase in the effective Er 3þ photoluminescence (PL) yield at 1535 nm by a factor of 14 and 42 under 488 nm and 976 nm excitations, respectively. As the Er 2 O 3 local thickness was increased to greater than 1.1 Å , PL quenching occurred due to strong local Er 3þ $ Er 3þ excitation migration leading to impurity quenching centers. In contrast, an increase in the local Yb 2 O 3 thickness generally resulted in an increase in the effective Er 3þ PL yield, except when the Er 2 O 3 and Yb 2 O 3 layers were separated by more than 2.3 Å or were adjacent, where weak Yb 3þ $ Er 3þ coupling or strong Yb 3þ $ Yb 3þ interlayer migration occurred, respectively. Finally, it is suggested that enhanced luminescence at steady state was observed under 488 nm excitation as a result of Er 3þ ! Yb 3þ energy back transfer coupled with strong Yb 3þ $ Yb 3þ energy migration.

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“…A similar phenomenon occurs at the Y 2 O 3 /Si interface, where Y shows a transition from yttrium silicate at the interface to pure Y 2 O 3 when the film grows. 28,29 Presently, the Y atom has the Ga atom as the second nearest neighbor for the Y–O–Ga bonding configuration at the interface, which is in contrast to Y in Y 2 O 3 in the Y–O–Y configuration. The differences in the electronegativity of Ga, O, and Y further cause the observed energy shift.…”

Section: Resultsmentioning

confidence: 99%

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

et al. 2018

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Y 2 O 3 was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yttrium [Y(CpEt) 3 ] and H 2 O process. The exponential attenuation of Ga 3d photoelectrons confirmed the laminar growth of ALD-Y 2 O 3 . In the embryo stage of the first ALD half-cycle with only Y(CpEt) 3 , the precursors reside on the faulted As atoms and undergo a charge transfer to the bonded As atoms. The subsequent ALD half-cycle of H 2 O molecules removes the bonded As atoms, and the oxygen atoms bond with the underneath Ga atoms. The product of a line of Ga–O–Y bonds stabilizes the Y 2 O 3 films on the GaAs substrate. The resulting coordinatively unsaturated Y–O pairs of Y 2 O 3 open the next ALD series. The absence of Ga 2 O 3 , As 2 O 3 , and As 2 O 5 states may play an important role in the attainment of low interfacial trap densities ( D it ) of <10 12 cm –2 eV –1 in our established reports.

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Radical-enhanced atomic layer deposition of Y2O3 via a β-diketonate precursor and O radicals

Cited by 37 publications

References 35 publications

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

The effects of energy transfer on the Er3+ 1.54 μm luminescence in nanostructured Y2O3 thin films with heterogeneously distributed Yb3+ and Er3+ codopants

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

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Radical-enhanced atomic layer deposition of Y2O3 via a β-diketonate precursor and O radicals

Cited by 37 publications

References 35 publications

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

The effects of energy transfer on the Er3+ 1.54 μm luminescence in nanostructured Y2O3 thin films with heterogeneously distributed Yb3+ and Er3+ codopants

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

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Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy