Radio-Frequency-Noise Characterization and Modeling of Type-II InP–GaAsSb DHBT

Microwave noise characterisation of AlInAs/GaAsSb/InP DHBTs

“…In comparison to InP/GaInAs sHBTs, the present devices offer nearly a 2 dB advantage at a current density of 0.5 mA/mm 2 for similar G A at 10 GHz [6], but they show a 1.0 -1.5 dB higher lowcurrent noise at 1 GHz. InP/GaInAs DHBTs were reported with NF min ¼ 2.2 dB at 18 GHz [5]. The present devices achieve much improvement over [4] and a similar NF to the smaller and faster InP/ GaAsSb DHBTs of [5] despite the larger emitter widths used here (0.9 compared to a 0.3 mm emitter width in [5]), thanks to the improved current gain achieved with the AlInAs type-I emitter chosen for this Letter.…”

“…InP/GaInAs DHBTs were reported with NF min ¼ 2.2 dB at 18 GHz [5]. The present devices achieve much improvement over [4] and a similar NF to the smaller and faster InP/ GaAsSb DHBTs of [5] despite the larger emitter widths used here (0.9 compared to a 0.3 mm emitter width in [5]), thanks to the improved current gain achieved with the AlInAs type-I emitter chosen for this Letter. This noise performance still does not approach the best SiGe HBT results, which show NF min , 1 dB at 10 GHz owing to aggressive device scaling and higher current gains with b 200 [7].…”

“…with an InP emitter) were first characterised by Ehrich et al, and showed minimum noise figures of NF min 7.5 dB between 2 -18 GHz for devices operating at J C ¼ 1 mA/mm 2 (and 4 -6 dB at 0.1 mA/mm 2 ) [4]; while Chuang et al later reported NF min ¼ 5 dB at 18 GHz in 0.3 Â 3 mm 2 devices operating with a peak f T ¼ 370 GHz bias of 4 mA/mm 2 [5]. The frequency dependence of noise characteristics was not reported in [5], but the authors identified their low current gain (b , 20) as the main noise performance limiter [5]. The noise properties of AlInAs/GaAsSb/InP DHBTs with a 'type-I' AlInAs emitter have not yet been reported and are the focus of this Letter.…”

“…In contrast to other technologies, to date relatively little is known about the microwave noise properties of GaAsSb-based DHBTs [4,5]. The noise properties of 'type-II' emitter InP/GaAsSb/InP DHBTs (i.e.…”

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

“…As a result, relatively little attention has been given to the analog properties of InP/GaAsSb DHBTs in general. In particular, few works so far have focused on the microwave noise properties of InP/GaAsSb DHBTs [4]- [6]. Although InP/GaAsSb DHBTs can exhibit attractive cutoff frequencies, their reported minimum noise figures have been high (e.g., NF min = 3.5−4.5 dB at 10 GHz) and were attributed to high base current levels.…”