Radio-frequency response of semiconducting<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CdF</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>:</mml:mo><mml:mi mathvariant="normal">I</mml:mi><mml:mi mathvariant="normal">n</mml:mi></mml:math>crystals with Schottky barriers

Shcheulin, A. S.; Kupchikov, A. K.; Angervaks, A. E.; Onopko, D. E.; Ryskin, A. I.; Ritus, A. I.; Пронин, А. В.; Волков, А. А.; Lunkenheimer, P.; Loidl, A.

doi:10.1103/physrevb.63.205207

Cited by 12 publications

(4 citation statements)

References 27 publications

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“…We should note, that the data obtained for the values of kinetic coefficients are at some extent qualitative, because the assumption that the direct transitions between the deep levels and the conduction band is negligible is not strongly fulfilled in CdF 2 :In at temperatures between 78 and 150 K. Nevertheless, the used ratios N sh /n e calculated by the simple approximate Eqn. 20 for T = 78 K and T = 110 K coincided within a few tenth of a percent with the ratios obtained with the formulae of exact statistical calculation derived in [11]. Similar measurements and data analysis for the CdF 2 :Ga crystals would give accurate results, since in this crystal E deep = 0.7 eV [5], and the assumption mentioned above is fulfilled.…”

Section: Light Excitation and Measurements Of The Shallow State Kineticssupporting

confidence: 83%

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Determination of the parameters of semiconductingCdF2:Inwith Schottky barriers from radio-frequency measurements

et al. 2002

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Physical properties of semiconducting CdF2 crystals doped with In are determined from measurements of the radio-frequency response of a sample with Schottky barriers at frequencies 10 − 10 6 Hz. The dc conductivity, the activation energy of the amphoteric impurity, and the total concentration of the active In ions in CdF2 are found through an equivalent-circuit analysis of the frequency dependencies of the sample complex impedance at temperatures from 20 K to 300 K. Kinetic coefficients determining the thermally induced transitions between the deep and the shallow states of the In impurity and the barrier height between these states are obtained from the time-dependent radio-frequency response after illumination of the material. The results on the low-frequency conductivity in CdF2:In are compared with submillimeter (10 11− 10 12 Hz) measurements and with room-temperature infrared measurements of undoped CdF2. The low-frequency impedance measurements of semiconductor samples with Schottky barriers are shown to be a good tool for investigation of the physical properties of semiconductors.

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Section: Light Excitation and Measurements Of The Shallow State Kineticssupporting

confidence: 83%

“…All these parameters have been defined from low frequency (10 − 10 6 Hz) measurements of the complex impedance of thin plane-parallel CdF 2 : In samples with metallic electrodes which were either sputtered on their surfaces or just brought into contact with the surfaces. This method is the basis of our previous study [11].…”

Section: Introductionmentioning

confidence: 99%

Determination of the parameters of semiconductingCdF2:Inwith Schottky barriers from radio-frequency measurements

et al. 2002

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“…It also accounts for the temperature and frequency dependence of the capacitance observed here, which is consistent with that of a Schottky barrier, as previously observed in different metal/ semiconductor junctions. 21,22 Finally it easily explains why the capacitance measured at low temperature coincides with that of normal Ta 2 O 5 layers, since at sufficiently low temperature the carriers originating from the dopants completely freeze out and the material behaves as a true insulator again. Finally, futher support for an explanation based on quenched-in vacancy doping is provided by the observation that after annealing in vacuum, the specific capacitance of anomalous layers is substantially reduced, and, for some of the studied materials, the ''normal'' dielectric behavior is fully restored.…”

Section: Resultsmentioning

confidence: 73%

Dielectric response of sputtered transition metal oxides

Iosad

Ruis

Morks

et al. 2004

Journal of Applied Physics

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We have investigated the dielectric properties of thin layers of five oxides of transition metals (Ta 2 O 5 , HfO 2 , ZrO 2 , (ZrO 2 ) 0.91 (Y 2 O 3 ) 0.09 , and Sn 0.2 Zr 0.2 Ti 0.6 O 2 ) sputtered from ceramic targets at different pressures. We find that layers deposited at low pressure behave as expected from literature, whereas layers deposited at high pressure all exhibit an anomalous dielectric response similar to that reported for the so-called ''colossal'' dielectric constant materials. The characterization of the thickness, frequency, and temperature dependence of the capacitance, as well as the comparison of film properties before and after annealing show that the anomalous dielectric response is due to quenched-in vacancies that act as dopants and cause the insulating layers to behave as semiconductors. An increase in quenched-in vacancies concentration with sputtering pressure results in a transition from normal to anomalous dielectric response and gradual increase in layer conductivity. In contrast, the refractive index does not depend on sputtering pressure. This observation indicates the possible application of these materials as transparent coatings with a tunable electrical conductivity.

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“…H.M. Mahmudov et al noted it has been established that the MBE growth of the CdF 2 /Si (111) film at the initial stage proceeds according to the Stranski-Krastanov mechanism, and then the growth occurs according to the Frank-Van der Merve mechanism [13]. The (1×1) CdF 2 (111) surface is formed after high-temperature (T = 1120 K) heating of films with d ≥ 150 ÷ 200 Å [14].…”

Section: Resultsmentioning

confidence: 99%

The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2

Аbduvayitov,

Imanova,

Tashmukhamedova

et al. 2023

Scientific Herald of Uzhhorod University Series Physics

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Relevance. In the case of bombardment with Mg metal ions, the changes are accompanied by the introduction of metal atoms and the formation of various types of compounds. Thus, CdF2 is intensively decomposed into components in the near-surface layer in the process of ion implantation. A small part of these components can be sprayed from the surface. Due to the high chemical activity, almost all of the liberated fluorine atoms again enter into a chemical bond with both the atoms of the alloying element and the atoms of cadmium. Consequently, three-component compounds are formed in the near-surface layer. Therefore, it is necessary to define the electronic states, band energy, and optical parameters of CdF2 and Cd0.6Mg0.4F2 films. Purpose. The composition, structure, and properties of CdF2 implanted with Mg+ ions in combination with thermal and laser annealing for the first time were the research aims. Methodology. The experimental studies were carried out at a vacuum of at least 10-7 Pa using the methods of Auger electron spectroscopy (AES) and ultraviolet photoelectron spectroscopy (UVES). The depth distribution profiles of atoms were determined by the AES method in combination with layer-by-layer etching of the surface with Ar+ ions with E0=2-3 keV. Results. CdF2 is intensively decomposed into components in the near-surface layer in the process of ion implantation. Consequently, three-component compounds are formed in the near-surface layer. Band-energy parameters and densities of the state of electrons in the valence band of this film are determined. Conclusions. The effect of the implantation of Mg+ ions on the composition and electronic structure of single-crystal CdF2/Si(III) films was studied for the first time. The densities of electronic states, band-energy and optical parameters of CdF2 and Cd0.6Mg0.4F2 films have been determined

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Radio-frequency response of semiconductingCdF2:Incrystals with Schottky barriers

Cited by 12 publications

References 27 publications

Determination of the parameters of semiconductingCdF2:Inwith Schottky barriers from radio-frequency measurements

Determination of the parameters of semiconductingCdF2:Inwith Schottky barriers from radio-frequency measurements

Dielectric response of sputtered transition metal oxides

The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2

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