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The dielectric response of semiconducting CdF 2 crystals with bistable In centers in the range of 10 1 Ϫ10 6 Hz reveals a quasi-Debye relaxation due to Schottky barriers at the Au/Ag contacts. These spectra can be modeled with a two-or tri-layer capacitor, the characteristics of which are determined by the conductivity and capacity of the crystal volume and the depletion layers at the contacts ͑the Maxwell-Wagner capacitance͒. Analyses of the temperature dependence of these parameters show that the volume conductivity is due to free-electron motion, whereas the depletion-layer conductivity probably is caused by electron jumps over the deep In centers. Illumination of the crystals in the photoionization absorption band of the deep centers has the same effect upon the dielectric response as an increase of the temperature since both factors increase the free-electron concentration.

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