Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

In this study, silicon nitride films were deposited in SiH 4 -N 2 plasma using a plasma-enhanced chemical vapor deposition system at room-temperature. The radio frequency bias power impact on the films characteristics (deposition rate, refractive index, and surface roughness) was examined. Ion energy information (energy level, energy flux) collected using an ion energy analysis system was correlated with the film characteristics. Increasing the bias power increased the ion energy, more noticeably with the high ion energy. For the same variations in the bias power, the ion energy flux initially decreased considerably and then varied little. A similar variation was noticed in both film characteristics. Both the deposition rate and the refractive index were strongly correlated with the ratio of high ion energy to low ion energy rather than high or low ion energy. A similar dependency was also observed for the refractive index. The dependency of surface roughness changed from ion energy to ion energy flux. The roles of the ion energy flux were further examined by implicating them in AFM images. The low ion energy flux was identified as a contributor to the extreme peaks that significantly deteriorated the surface roughness. The highest deposition rate, highest refractive index, and smallest surface roughness obtained were 183 Å/min, 2.06, and 0.230 nm, respectively.

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Room temperature, ion energy-controlled deposition of silicon nitride films in a SiH4-N2 plasma

Kim

Kwon

Seo

2010

Met. Mater. Int.

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Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature

Kim

2010

Met. Mater. Int.

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Silicon nitride (SiN) films were deposited using a radio frequency (rf) pulsed-plasma deposition system in a SiH4-N2 plasma at room temperature. The effects of rf bias power and duty ratio on SiN deposition were investigated. The bias power and duty ratio were experimentally varied in ranges of 50 W to 90 W and 30 % to 90%, respectively. An ion energy analyzer was utilized to collect ion energy and ion energy flux. Little variations in low and high energies, respectively with the duty ratio was observed at a duty ratio of over 60 %. In contrast, ion energies sharply decreased with a decrease in the duty ratio to a range of 30 % to 60 % range. Modest variations in high and low energy fluxes were observed at duty ratio of over 40 % and 60%, respectively. Decreasing the bias power increased ion energy fluxes. In general, higher ion energy fluxes were observed at lower bias powers. The deposition rate strongly correlated with a low ion energy flux at 90 W. This was noted in a duty ratio range of 30 % to 50 % at 70 W. A high correlation with a high ion energy flux was also observed at 50 W. For all variations, the deposition rate ranged from158 Å/ min to 185 Å/min.

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Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4–NH3 plasma

Kim¹,

Kim²,

Kang³

et al. 2011

Current Applied Physics

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Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

Cited by 7 publications

References 14 publications

Room temperature, ion energy-controlled deposition of silicon nitride films in a SiH4-N2 plasma

Room temperature, ion energy-controlled deposition of silicon nitride films in a SiH4-N2 plasma

Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature

Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4–NH3 plasma

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