Radiometric characterization of an LWIR, type-II strained layer superlattice pBiBn photodetector

Treider, Laura A.; Morath, Christian P.; Cowan, Vincent M.; Tian, Zhaobing; Krishna, S.

doi:10.1016/j.infrared.2014.09.043

Cited by 5 publications

(4 citation statements)

References 7 publications

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“…Like the CBIRD design, it was designed to mitigate the higher dark current in p-n junction and p-i-n photodetectors through incorporation of two unipolar carrier blocking barriers [18]. The first generation pBiBn detector demonstrated a significant improvement in performance over conventional p-i-n designs, with a fourfold increase in detectivity in the LWIR [24].…”

Section: Pbibn Detectormentioning

confidence: 99%

“…By optimizing the oscillator strength in this material system, a large quantum efficiency and responsivity can likewise be obtained [17]. In addition, type II SLS detectors based on the 6.1 Å family of materials can be passively cooled, thus reducing the cryocooler burden, and these take advantage of the relatively large installed III-V material manufacturing base [18]. These properties have enabled the fabrication of large format IR FPAs based on type II SLS suitable for high-resolution thermal imaging applications including space-borne surveillance systems, low-background night vision, and missile detection [19][20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

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Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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Section: Pbibn Detectormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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show abstract

“…Therefore, BIRDs have become the most effective strategy for suppressing dark current in the field of infrared detectors. Currently, various barrier device architectures, such as XBn [33], XBp [34], pBp [35], DHLP [36], CBIRD [37,38], pBiBn [39], C p DBn [29] and GBn [40], have been developed by changing the conductive type, barrier position and number of heterojunctions, exhibiting device performance comparable to traditional mercury cadmium telluride and indium antimonide (InSb) pin-based infrared detectors.…”

Section: Introductionmentioning

confidence: 99%

Theoretical design of uncooled mid-infrared PbSe P⁺pBn⁺ barrier detectors

Su,

Liu,

Zhang

et al. 2024

J. Phys. D: Appl. Phys.

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A novel uncooled Mid-wavelength infrared (MWIR) P+pBn+ barrier detector based on epitaxial PbSe absorber layer on Ge substrate is theoretically investigated by finite element analysis in order to achieve optimal detection performance. The simulated results show that the P+pBn+ barrier architecture can further effectively reduce the room-temperature dark current to 4.45 mA/cm2 under -0.1 V bias, which is lower 12 times than PbSe pBn+ unipolar barrier device in previous work. Moreover, the P+pBn+ barrier architecture exhibits excellent responsivity and detectivity of 1.83 A/W and 3.23×1010 cm Hz1/2 W-1 at 3.8 μm, respectively. These results suggest that this P+pBn+ barrier detector based on matural MBE epitaxy technologies could be potential in the emerging high-sensitivity and high-detectivity uncooled MWIR applications.

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“…InAs/GaSb-based type-II strain-layer superlattices (T2SLSs) have recently demonstrated great promise for infrared (IR) detection. 2,[7][8][9][10][11][12] Alternating InAs and GaSb layers of controlled thickness allow tuning of the narrow bandgap from 3 to 30 lm wavelength. The integrated unipolar barrier layer (B) reduces dark current, so that the detectors demonstrate detectivity comparable to conventional HgCdTe detectors.…”

Section: Introductionmentioning

confidence: 99%

Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

Lee

Fredricksen

Flitsiyan

et al. 2018

Journal of Applied Physics

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The minority carrier diffusion length was directly measured by the variable-temperature Electron Beam-Induced Current technique in InAs/GaSb type-II strain-layer-superlattice infrared-detector structures. The Molecular Beam Epitaxy-grown midwave infrared superlattices comprised 10 monolayers of InAs and 10 monolayers of GaSb to give a total absorber thickness of 4 lm. The diffusion length of minority electrons in the p-type absorber region of the p-type/barrier/n-type structure was found to increase from 1.08 to 2.24 lm with a thermal activation energy of 13.1 meV for temperatures ranging from 77 to 273 K. These lengths significantly exceed the individual 10-monolayer thicknesses of the InAs and GaSb, possibly indicating a low impact of interface scattering on the minority carrier diffusion length. The corresponding minority electron mobility varied from 48 to 65 cm 2 /V s. An absorbed gamma irradiation dose of 500 Gy halved the minority carrier diffusion length and increased the thermal activation energy to 18.6 meV, due to creation of radiation-induced defect recombination centers.

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Radiometric characterization of an LWIR, type-II strained layer superlattice pBiBn photodetector

Cited by 5 publications

References 7 publications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Theoretical design of uncooled mid-infrared PbSe P⁺pBn⁺ barrier detectors

Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

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Radiometric characterization of an LWIR, type-II strained layer superlattice pBiBn photodetector

Cited by 5 publications

References 7 publications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Theoretical design of uncooled mid-infrared PbSe P+pBn+ barrier detectors

Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

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Theoretical design of uncooled mid-infrared PbSe P⁺pBn⁺ barrier detectors