Raman and Infrared Spectra of Amorphous Semiconductors (GeS₂)_1-x(Sb₂S₃)_x Systems

Abstract

Polarized Raman spectra and far infrared spectra of amorphous (GeS2)1-x (Sb2S3) x systems (0≦x≦0.9) were measured. The Raman spectra due to Sb2S3 component showed strong polarization dependences. The optical constants were calculated by Kramers-Kronig analysis of the infrared reflection spectra, and were also analyzed by the classical oscillator models. The effective charges of Sb ion were calculated. The results of the Raman and infrared spectra show that SbS3 pyramidal unit is predominant in the local structure around Sb atom in these amorphous systems.