Raman and RAS Measurements on Uniaxially Strained Thin Semiconductor Layers

Liarokapis, E.; Papadimitriou, D.; Rumberg, J.; Richter, Wolfgang

doi:10.1002/(sici)1521-3951(199901)211:1<309::aid-pssb309>3.0.co;2-w

Cited by 25 publications

(15 citation statements)

References 5 publications

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“…The solution of either of these two systems will yield reliable values of P and D. Liarokapis et al 24 have developed a new stress-inducing device to determine the electron and phonon deformation potential of thin layers and layered structures. The device can produce the in-plane strain that we want.…”

Section: Gaasõal X Ga 1àx As Superlattices With Homogeneous In-plasupporting

confidence: 89%

“…For x 0 ϭ1.3 ͓Fig. 6͑b͔͒, the calculated result agrees with the experimental line shape both for the real part and the imaginary part; if we take into account the excitonic effects, the anisotropy intensities will be improved by 5-10 times 24 and the linewidth will agree with the experiment too. When x 0 is greater than 5 ͓Fig.…”

Section: Comparison With the Experimental Datamentioning

confidence: 99%

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Determination of the values of hole-mixing coefficients due to interface and electric field inGaAs/Alx<

Chen

Wang

et al. 2001

Phys. Rev. B

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Numerical calculations within the envelope function framework have been performed to analyze the relations between the magnitude of in-plane optical anisotropy and the values of the additional hole-mixing coefficients due to interface and electric field in ͑001͒ symmetric GaAs/Al x Ga 1Ϫx As superlattices for light propagating along the ͓001͔ direction. It is found that the heavy-and light-hole states are mixed independently by interface and electric field. The numeric results demonstrate that the line shape of the in-plane anisotropic spectrum is determined by the ratio of the two hole-mixing coefficients. Theoretical analysis shows that with the help of simple calculation of the anisotropy at kϭ0, reliable values of the hole-mixing coefficients can be determined by reflectance-difference spectroscopy ͑RDS͒ technique, demanding no tedious fitting of experimental curves. The in-plane optical anisotropy measured by RDS provides a new method of getting the information on buried interfaces through the value of the hole-mixing coefficient due to interface.

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Section: Gaasõal X Ga 1àx As Superlattices With Homogeneous In-plasupporting

confidence: 89%

Section: Comparison With the Experimental Datamentioning

confidence: 99%

Determination of the values of hole-mixing coefficients due to interface and electric field inGaAs/Alx<

Chen

Wang

et al. 2001

Phys. Rev. B

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“…This inherent stress at the interface causes the polarization dependent splitting and/or shift of the Raman line, which vary linearly with the stress. Raman shift due to the hydrostatic component of the strain yields a value for the Grüneisen parameter (average value of change in vibrational frequency of the atoms in a crystal per unit dilation) for the new material [26,27]. Phase transitions: An additional thermodynamic aspect is phase transitions, which can play an important role in device fabrication.…”

Section: Introductionmentioning

confidence: 99%

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

Singha

Dhar

Roy

2005

American Journal of Physics

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Modern materials science requires efficient processing and characterization techniques for low dimensional systems. Raman spectroscopy is an important non-destructive tool, which provides enormous information on these materials. This understanding is not only interesting in its own right from a physicist's point of view, but can also be of considerable importance in optoelectronics and device applications of these materials in nanotechnology. The commercial Raman spectrometers are quite expensive. In this article, we have presented a relatively less expensive set-up with homebuilt collection optics attachment. The details of the instrumentation have been described. Studies on four classes of nanostructures -Ge nanoparticles, porous silicon (nanowire), carbon nanotubes and 2D InGaAs quantum layers, demonstrate that this unit can be of use in teaching and research on nanomaterials.

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“…1. This strain device consisted of a micrometer system and could move asharp edge against the center of a stripe supported at its ends by a fixed cover with a hole [17]. For small deformations compared with the dimensions of the silicon stripe there is a neutral surface in the middle part of the stripe.…”

Section: Strain Device and Sishg Experimentsmentioning

confidence: 99%

Precise measurement of weak strain by second-harmonic generation from silicon (111) surface

Zhao

Chen

et al. 2013

J. Opt. Soc. Am. B

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The weak strain induced by uniaxial strain device is calibrated by strain-induced second-harmonic generation (SISHG) from silicon (111) surface. Dependences of the strain-induced second-harmonic intensity on sample azimuth angle show that the strain leads to increase of SH intensity. The high consistency of the SH-measured strain and the applied strain indicates that weak strain can be accurately calibrated by SISHG. The small applied strain does not greatly affect the 3 m symmetry of silicon (111) surface, but enhances the SH intensity evidently. The bulk inversion symmetry of crystal silicon vanished under applying of uniaxial strain and this also has demonstrated by first-principles simulation. Furthermore, the theoretical relative variation of Si-Si bond length agrees exactly with the applied strain along [111] direction.

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Raman and RAS Measurements on Uniaxially Strained Thin Semiconductor Layers

Cited by 25 publications

References 5 publications

Determination of the values of hole-mixing coefficients due to interface and electric field inGaAs/Alx<

Determination of the values of hole-mixing coefficients due to interface and electric field inGaAs/Alx<

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

Precise measurement of weak strain by second-harmonic generation from silicon (111) surface

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