Raman-based silicon photonics

Jalali, Bahram; Raghunathan, Varun; Dimitropoulos, D.; Boyraz, Özdal

doi:10.1109/jstqe.2006.872708

Cited by 157 publications

(112 citation statements)

References 42 publications

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“…© 2010 Optical Society of America OCIS codes: 190.4360, 230.0230, 230.4480, 250.4390. Despite several experimental demonstrations of net Raman gain in silicon-on-insulator (SOI) waveguides [1][2][3], the problem of efficient Raman amplification in silicon is far from being fully solved. The main reason for this is the need to minimize nonlinear optical losses, caused by two-photon absorption (TPA) and free-carrier absorption (FCA), while avoiding excessive signal noise.…”

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confidence: 99%

Effect of free carriers on pump-to-signal noise transfer in silicon Raman amplifiers

et al. 2010

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We study noise transfer from pump to signal in silicon Raman amplifiers, with particular emphasis on the regimes of strong cumulative free-carrier absorption and heavy pump depletion. We calculate the relative intensity noise (RIN) transfers in copumped and counterpumped amplifiers and provide intuitive explanations for RIN peculiarities. We show that noise transfer at low frequencies may be suppressed by carefully choosing the pump intensity, effective free-carrier lifetime, or amplifier length, but only at the expense of a rise in noise at high frequencies. © 2010 Optical Society of America OCIS codes: 190.4360, 230.0230, 230.4480, 250.4390. Despite several experimental demonstrations of net Raman gain in silicon-on-insulator (SOI) waveguides [1][2][3], the problem of efficient Raman amplification in silicon is far from being fully solved. The main reason for this is the need to minimize nonlinear optical losses, caused by two-photon absorption (TPA) and free-carrier absorption (FCA), while avoiding excessive signal noise. The noise performance is especially important for silicon Raman amplifiers (SRAs), because they operate at high pump powers that result in enhanced transfer of the relative intensity noise (RIN) from pump to the signal. Unlike the challenge of nonlinear losses, which has been much investigated in recent years [4][5][6], the physics of RIN transfer in SRAs is poorly understood. The results of a few recent theoretical studies on this phenomenon [7,8] are not widely applicable, for they are based on strong simplifying assumptions, which may not be met in practice. Specifically, in order to estimate the impact of RIN transfer on the noise figure in SRAs, Sang et al.[7] assumed instantaneous FCA and employed the undepleted-pump approximation. While the first assumption is valid for low-frequency noise components, the second holds only when the signal power remains much smaller than the pump power all along the amplifier. In our recent work [8], we abandoned the undepleted-pump approximation and analytically calculated the low-frequency RIN in copumped SRAs. Although the results allowed us to qualitatively predict the possibility of zero noise transfer under certain conditions, a precise quantitative assessment of this phenomenon is still required. In this Letter, we present a general study of the RIN-transfer problem in SRAs. In our work, we consider both the depletion of the pump and the cumulative nature of FCA, draw an intuitive picture of the physics behind the noise transfer, and present guidelines for RIN minimization.The starting point for our study is the set of partial differential equations that describe the interaction of two cw fields (pump and signal) propagating through an SOI waveguide of constant cross section. These equations relate the pump intensity I p ðz; tÞ, the signal intensity I s ðz; tÞ, and the density Nðz; tÞ of free carriers as [8,9]

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confidence: 99%

Effect of free carriers on pump-to-signal noise transfer in silicon Raman amplifiers

et al. 2010

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“…Nonlinear effects such as SRS [67][68][69][70][71][72][73][74][75][76][77][78][79][80][81][82][83], self-and cross-phase modulation (SPM and XPM) [84][85][86][87][88][89][90][91], fourwave mixing (FWM) [92][93][94][95][96][97][98][99][100][101][102], and supercontinuum generation [60,61,[103][104][105][106][107][108] are actively investigated. The main focus is on the near-IR wavelength range, around the telecom window.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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“…This e®ect generates electron-hole pairs, which remain excited in the sample for a long time (micro to milliseconds) and lead to strong absorption at both the pump and signal frequencies. [13][14][15] Nonlinear photonics is a technology for implementing various optical functionalities. 16 For example, silicon o®ers a variety of nonlinear e®ects that can be used to process optical signals at speeds of 100 Gbps and beyond 17,18 and to enable broadband electro-optic modulation, 19,20 ampli¯cation, 21,22 and wavelength conversion.…”

Section: Introductionmentioning

confidence: 99%

Toward an ideal nanomaterial for on-chip Raman laser

Sirleto

Ferrara

Vergara

2017

J. Nonlinear Optic. Phys. Mat.

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One of the most important applications of stimulated Raman scattering (SRS) is the realization of ampli¯ers or laser sources in bulk materials, in¯ber and in integrated optic format as well. We note that, as a general rule, in all laser gain bulk materials, there is a tradeo® between gain and bandwidth: line width may be increased at the expense of peak gain. This tradeo® is a fundamental limitation toward the realization of micro/nano-sources with large emission spectra. In this paper, in order to clarify the possibility of obtaining new materials with both large Raman gain coe±cients and spectral bandwidth, SRS investigations in nanostructures, spanning from nanometrically heterogeneous K 2 O-Nb 2 O 5 SiO 2 (KNS) glasses to Si nanocrystals, are reported and discussed.

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Raman-based silicon photonics

Cited by 157 publications

References 42 publications

Effect of free carriers on pump-to-signal noise transfer in silicon Raman amplifiers

Effect of free carriers on pump-to-signal noise transfer in silicon Raman amplifiers

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Toward an ideal nanomaterial for on-chip Raman laser

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