As an alternative to the traditional
blend casting method, a novel
heterojunction doping approach is developed to dope hole extraction
layers (HELs) for greatly boosting the efficiency of charge carrier
collection in perovskite solar cells (PSCs). The HELs are prepared
by sequential deposition of Cs-doped VO
x
and poly(triarylamine) (PTAA) thin films, and extensive heterojunction
doping is observed in the contact interface between the two thin films
due to the presence of electron transfer from PTAA to Cs-doped VO
x
. The interfacial doping in the Cs-doped VO
x
/PTAA HELs enhances their conductivity and improves
their energy level alignment. These increase V
OC, J
SC, FF, and power conversion
efficiency (PCE) in PSCs compared to those in the PSCs with the use
of Cs-doped VO
x
and PTAA separately.