Raman investigation of strain in Si∕SiGe heterostructures: Precise determination of the strain-shift coefficient of Si bands

Nakashima, S.; Mitani, Takeshi; Ninomiya, Masaharu; Matsumoto, Koji

doi:10.1063/1.2178396

Cited by 97 publications

(81 citation statements)

References 32 publications

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“…1͒ confirm the presence of Ge in the NWs ͑Raman peak at 300 cm −1 ͒ as well as strong SiGe intermixing ͑a peak near 400 cm −1 ͒. Also, a broad Raman peak near 500 cm −1 associated with Si-Si vibration in SiGe indicates a nonuniform strain, 18 while the Raman signal associated with the Si substrate is found at 520 cm −1 ͑Fig. 1͒.…”

supporting

confidence: 53%

Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

Chang

Tsybeskov

Sharma

et al. 2009

Applied Physics Letters

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1063/1.3240595Applied physics letters, 95, 13, 2009 Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements.

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supporting

confidence: 53%

Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

Chang

Tsybeskov

Sharma

et al. 2009

Applied Physics Letters

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“…where b is so-called the b coefficient which is used for the evaluation of isotropic biaxial strain biaxial in strained Si substrates using the Raman wavenumber shift of the LO phonon mode 3 [21,47]. Various PDPs have so far been suggested by many researchers.…”

Section: Methodology Of Measurements For Anisotropic Biaxial Stress Smentioning

confidence: 99%

“…Thirty-seven of forty-five papers, approximately eightytwo percent papers, referred PDPs suggested by the Cardona's group in 1970-1990. Nakashima et al examined the b coefficient in detail using strained Si substrates by Raman spectroscopy and high-resolution XRD in 2006 [21]. Furthermore, the detailed investigation of the b coefficient was performed in the working group of Japan electronics and information technology industries association (JEITA) in 2007 [48].…”

Section: Methodology Of Measurements For Anisotropic Biaxial Stress Smentioning

confidence: 99%

“…Among them, Raman spectroscopy has the advantages such as high sensitive to local strain, submicron spatial resolution, nondestructive measurements, fast measurements, and ease of use. Consequently, Raman spectroscopy has been frequently used by many researchers to measure the strain in Si [3,[7][8][9][17][18][19][20][21]. However, conventional Raman spectroscopy fails to measure the complicated stress states in Si.…”

Section: Introductionmentioning

confidence: 99%

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Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Kosemura¹,

Tomita²,

Usuda³

et al. 2012

Advanced Aspects of Spectroscopy

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“…This situation is quite different from the case of Raman spectra of strained Si on thick SiGe substrates where the peak at 520 cm −1 is not observed due to the limited depth of laser light penetration into the SiGe layer. 15,35 In this case the Si-Si peak arising from the Si substrate can be used with high accuracy as an internal reference in analyzing the Raman spectrum. The intensity of a peak at 520 cm −1 is much larger compared to the two other Si-Si peaks in the case of a thin s-Si layer on an ultrathin SiGe layer and, in particular, in comparison with the peak for s-Si, due to its small thickness ͓see Fig.…”

Section: Strained Si On Sige Virtual Substratementioning

confidence: 99%

Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

Perova¹,

Wasyluk²,

Lyutovich³

et al. 2011

Journal of Applied Physics

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Micro-Raman spectroscopy was employed for the determination of the germanium content, x and strain, , in ultrathin SiGe virtual substrates grown directly on Si by molecular beam epitaxy. The growth of highly relaxed SiGe layers was achieved by the introduction of point defects at a very low temperature during the initial stage of growth. SiGe virtual substrates with thicknesses in the range 40-200 nm with a high Ge content ͑up to 50%͒ and degree of relaxation, r, in the range 20%-100% were investigated using micro-Raman spectroscopy and x-ray diffraction ͑XRD͒ techniques. The Ge content, x, and strain, , were estimated from equations describing Si-Si, Si-Ge, and Ge-Ge Raman vibrational modes, modified in this study for application to thin SiGe layers. The alteration of the experimentally derived equations from previous studies was performed using independent data for x and r obtained from XRD reciprocal space maps. A number of samples consisting of a strained-silicon ͑s-Si͒ layer deposited on a SiGe virtual substrate were also analyzed. The stress value for the s-Si varied from 0.54 to 2.75 GPa, depending on the Ge-content in the virtual substrates. These results are in good agreement with theoretically predicted values.

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Raman investigation of strain in Si∕SiGe heterostructures: Precise determination of the strain-shift coefficient of Si bands

Cited by 97 publications

References 32 publications

Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

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