Raman investigations of Cu(In,Ga)Se2 thin films with various copper contents

Witte, Wolfram; Kniese, R.; Powalla, Michael

doi:10.1016/j.tsf.2008.07.011

Cited by 239 publications

(161 citation statements)

References 19 publications

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“…The frequency of this mode increases linearly with increasing Ga content [8,9]. The low intensity shoulder at 247 cm -1 probably belongs to Cu 2-x Se domains [8]. The shoulder near 162 cm -1 indicates the presence of molecularity [Cu]/[In+Ga] lower than 1 [10], which was expected in case of our target composition.…”

Section: Resultssupporting

confidence: 53%

“…This mode can be described as vibration of Se anions in the x-y plane. The frequency of this mode increases linearly with increasing Ga content [8,9]. The low intensity shoulder at 247 cm -1 probably belongs to Cu 2-x Se domains [8].…”

Section: Resultsmentioning

confidence: 90%

“…Figure 6 compares the normalized Raman spectra of four studied samples. The most intense band at 177-180 cm -1 belongs to A 1 mode of CIGS [8]. This mode can be described as vibration of Se anions in the x-y plane.…”

Section: Resultsmentioning

confidence: 98%

See 2 more Smart Citations

Far infrared spectroscopy and imaging of Cu(In,Ga)Se<sub>2</sub> layers

Minkevičius¹,

Balakauskas²,

Šoliūnas³

et al. 2013

Lith. J. Phys.

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The Fourier transform infrared spectroscopy (FT-IR), terahertz time domain spectroscopy (THz-TDS), and terahertz imaging were applied to study the properties of Cu(In, Ga)Se 2 (CIGS) layers grown on Mo/soda lime glass substrate. Correlation between the Infrared reflectivity spectrum around 5-7 THz (167-233 cm -1 ), Raman spectra, and X-ray diffraction data is investigated for samples grown on the molybdenum layer of approximately 1 μm in thickness. Also, transparency of CIGS layers was demonstrated for frequencies down to several hundred gigahertzes. Such transparency opens possibilities for future three-dimensional characterization of CIGS structures using phase sensitive imaging.

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Section: Resultssupporting

confidence: 53%

Section: Resultsmentioning

confidence: 90%

See 1 more Smart Citation

Far infrared spectroscopy and imaging of Cu(In,Ga)Se<sub>2</sub> layers

Minkevičius¹,

Balakauskas²,

Šoliūnas³

et al. 2013

Lith. J. Phys.

View full text Add to dashboard Cite

show abstract

“…Figure S3). [40][41][42] The spectra also confirm the absence of the typical peak of the -SH group at 2500-2600 cm -1 . 43 It is well known that Cu 2-x Se is easy to oxidize, 2, 44 and XPS was used to determine the ratio of different valence states of Cu (i.e., Cu + /Cu 2+ ) in both non-treated and treated Cu 2-x Se samples ( Figure 3).…”

Section: Resultsmentioning

confidence: 62%

Ambient Facile Synthesis of Gram-Scale Copper Selenide Nanostructures from Commercial Copper and Selenium Powder

Chen

Dou

2015

ACS Appl. Mater. Interfaces

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Grams of copper selenides (Cu 2-x Se) were prepared from commercial copper and selenium powders in the presence of thiol ligands by a one-pot reaction at room temperature. The resultant copper selenides are a mixture of nanoparticles and their assembled nanosheets, and the thickness of nanosheets assembled is strongly dependent on the ratio of thiol ligand to selenium powder. The resultant Cu 2-x Se (0 ≤ x ≤ 0.25) nanostructures were treated with hydrazine solution to remove the surface ligands and then explored as a potential thermoelectric candidate in comparison with commercial copper selenide powders. The research provides a novel ambient approach for preparation of Cu 2-x Se nanocrystallines on a large scale for various applications.

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“…The quaternary chalcopyrite IIIIVI system with space group I42d contains 8 atoms per primitive unit cell with 20 Raman active optical phonon modes [14,15]. In case of CIGS material, the dominant A 1 mode located at around 176 ± 5 cm −1 (depends on the gallium content) represents the vibration of the selenium anions in the xy plane with other cations [16].…”

Section: Resultsmentioning

confidence: 99%

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

et al. 2014

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Copper indium gallium diselenide (CIGS) becomes more signicant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the nal eciency of the solar cell. An inuence of the post-deposition millisecond range ash lamp annealing on the optical and microstructural properties of the CIGS lms was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that ash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after ash lamp annealing the degradation of the photoluminescence is signicantly suppressed and the absolute absorption in the wavelength range of 2001200 nm increases by 25%.

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Raman investigations of Cu(In,Ga)Se2 thin films with various copper contents

Cited by 239 publications

References 19 publications

Far infrared spectroscopy and imaging of Cu(In,Ga)Se<sub>2</sub> layers

Far infrared spectroscopy and imaging of Cu(In,Ga)Se<sub>2</sub> layers

Ambient Facile Synthesis of Gram-Scale Copper Selenide Nanostructures from Commercial Copper and Selenium Powder

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

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