Due to its unique material properties, such as extreme hardness and radiation
resistance, silicon carbide has been used as an important construction
material for environments with extreme conditions, like those present in
nuclear reactors. As such, it is constantly exposed to energetic particles (e.g., neutrons) and consequently subjected to gradual crystal lattice degradation. In this article, the 6H-SiC crystal damage has been simulated by
the implantation of 4 MeV C3+ ions in the (0001) axial direction of a single
6H-SiC crystal to the ion fluences of 1.359 1015 cm-2, 6.740 1015 cm-2, and
2.02 1016 cm-2. These implanted samples were subsequently analyzed by Rutherford and elastic backscattering spectrometry in the channeling
orientation (RBS/C & EBS/C) by the usage of 1 MeV protons. Obtained spectra
were analyzed by channeling simulation phenomenological computer code
(CSIM) to obtain quantitative crystal damage depth profiles. The
difference between the positions of damage profile maxima obtained by CSIM
code and one simulated with stopping and range of ions in matter (SRIM), a
Monte Carlo based computer code focused on ion implantation simulation in
random crystal direction only, is about 10%. Therefore, due to small
profile depth shifts, the usage of the iterative procedure for calculating
crystal damage depth profiles is proposed. It was shown that profiles
obtained by iterative procedure show very good agreement with the ones
obtained with CSIM code. Additionally, with the introduction of channeling
to random energy loss ratio the energy to depth profile scale conversion,
the agreement with CSIM profiles becomes excellent.