Raman scattering diagnostics of as grown and pulsed laser modified Ge-Si nanostructures with quantum dots

Abstract

The investigation of nanosecond ruby laser impact on Ge/Si heterostructures with Ge x Si 1-x quantum dots (QD's) has been carried out. Both energy density in pulse and number of pulses changed. Raman spectroscopy was used to study the nanocluster states before and after laser irradiation. The method for control of composition and strain in Ge-Si based quantum dots was essentially improved.