Raman scattering from PbTiO3 thin films prepared on silicon substrates by radio frequency sputtering and thermal treatment

Taguchi, Isao; Pignolet, A.; Wang, L.; Proctor, M.; Lévy, F.; Schmid, P. E.

doi:10.1063/1.353862

Cited by 106 publications

(66 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The obtained temperature dependences of the soft mode frequencies and the damping (Figs. 1 and 2) (the damping is related to the width of the half-maximum for the Raman scattering lines) could explain the experimental results of Raman scattering from ferroelectric thin films [14,16,17]: a) the Raman frequencies for the thin film remarkabely shift to low frequencies compared with those for the bulk; b) the Raman lines of the thin film are broaded in comparison with those for the bulk; c) the line shapes of the film become broad as the temperature approaches T c .…”

Section: Numerical Results and Discussionmentioning

confidence: 68%

“…Recently, several research groups carried out Raman scattering studies to characterize the ferroelectric thin films and showed that all transverse optical (TO) phonons tended to depart from the corresponding positions of the bulk single crystal, implying that differences might exist between thin films and bulk single crystals [13][14][15][16][17][18]. Using Raman spectroscopy the temperature dependence of the phonon modes for thin ferroelectric films of PbTiO 3 is discussed by Taguchi et al [16] and Fu et al [17]. It was shown that in comparison with the single crystal spectra, the Raman frequencies for the thin film remarkably shift to low frequencies and that the Raman lines are broad.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dynamical Properties of Thin Ferroelectric Films Described by the Transverse Ising Model

Wesselinowa

2002

phys. stat. sol. (b)

View full text Add to dashboard Cite

show abstract

Section: Numerical Results and Discussionmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Dynamical Properties of Thin Ferroelectric Films Described by the Transverse Ising Model

Wesselinowa

2002

phys. stat. sol. (b)

View full text Add to dashboard Cite

show abstract

“…According to the Raman tensor for the tetragonal C 4v point group, only E(TO) modes are allowed in x zy x geometry and only A 1 (TO) modes appear in x zz x geometry. 37,38 The absence of any LO component of phonon modes in the 64 nm film spectra suggested an a-axis preferred orientation of the film, which was supported by the x-ray analysis.…”

Section: Thickness Effect In Pbtio 3 Thin Filmsmentioning

confidence: 54%

Studies on ferroelectric perovskites and Bi‐layered compounds using micro‐Raman spectroscopy

Dobal

Katiyar

2002

J Raman Spectroscopy

226

View full text Add to dashboard Cite

and their solid solutions useful in a broad range of device applications. Various factors that influence the material properties such as particle size, stresses, stoichiometry, compositional homogeneity and their effects on phase transition were investigated. The processing conditions, A-and B-site substitution, size-dependent Raman spectra and the structure-property correlations are discussed in the bulk, thin film and nano-crystalline forms of these materials. A film thickness dependence stress study on lead titanate (PT) and lead zirconate titanate (PZT) films indicated that the nature of stress depends strongly on the lattice parameters of the film and substrate. The size effect was found to decrease the ferroelectric transition temperature in lead-based perovskite materials. Both ionic charge and radii induced changes in the Raman spectra of A-and B-site substituted perovskites and layered compounds were studied. A-site substitution in strontium bismuth tantalite (SBT) was found to induce a relatively linear variation of transition temperature compared with the B-site substituted SBT.Raman spectra of layered compounds and their solid solutions exhibited a strong dependence on dopants resulting in structural modifications.

show abstract

“…Similar observations were made for the sol-gel-processed 13 and r.f.-sputtered PT thin films. 28 The tetragonal-to-cubic transition temperature observed for each thickness is displayed in Fig. 10 along with the stress variation for all of the films.…”

Section: Raman Spectra At Room Temperaturementioning

confidence: 99%

Investigations of micro‐stress and phase transition in sol–gel‐derived multideposited coatings of barium titanate using Raman spectroscopy

Gupta

2002

J Raman Spectroscopy

View full text Add to dashboard Cite

Thin films of barium titanate (BaTiO 3 ; BT) of various thicknesses (20, 60, 120, 160 and 200 nm) were deposited by a modified sol-gel route on M-plane sapphire [Al 2 O 3 : (1010)] substrates. Raman spectroscopy (RS) and x-ray diffraction (XRD) were used to evaluate the stress and structural changes with respect to film thickness and establish a correlation. Raman bands and x-ray peak intensities of 20 nm thick films were too weak to reveal any structural information. Structurally, all other films showed a polycrystalline nature and the average grain size increased with increasing thickness. From the changes in the lattice parameters and one of the Raman modes [B 1 + E (TO)], an inverse relation between the compressive stress and film thickness was found at room temperature. Excellent agreement was found for stress values from both measurements. The ferroelectric to paraelectric phase transition (T C ) was estimated from the temperature dependence of one of the lattice phonon (∼310 cm −1 ) wavenumber position (!, cm −1 ) and linewidth (0, cm −1 ). This is one of the phonons belonging to the tetragonal phase. For thin films, these 'order parameters' did not show apparent anomaly and were qualitatively evaluated from the loss of intensity of this mode. The values of T C in thin films differ from those of the bulk counterpart. Almost an exponential decrease in the stress was observed with increasing thickness for the films due to the structural changes or lattice parameter relaxation. This behavior of T C is discussed using the conventional Landau-Devonshire theoretical formulation.

show abstract

Raman scattering from PbTiO3 thin films prepared on silicon substrates by radio frequency sputtering and thermal treatment

Cited by 106 publications

References 35 publications

Dynamical Properties of Thin Ferroelectric Films Described by the Transverse Ising Model

Dynamical Properties of Thin Ferroelectric Films Described by the Transverse Ising Model

Studies on ferroelectric perovskites and Bi‐layered compounds using micro‐Raman spectroscopy

Investigations of micro‐stress and phase transition in sol–gel‐derived multideposited coatings of barium titanate using Raman spectroscopy

Contact Info

Product

Resources

About