Raman Scattering in Natural Diamond Crystals Implanted with High-Energy Ions and Irradiated with Fast Neutrons

Poklonskaya, O. N.; Вырко, С. А.; Khomich, А.А.; Averin, A. A.; Хомич, А. В.; Khmelnitsky, R. A.; Poklonski, N. A.

doi:10.1007/s10812-015-0037-8

Cited by 17 publications

(21 citation statements)

References 27 publications

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“…With such an aim, we have irradiated highpurity diamond single crystals with 9 MeV C 3+ microbeams of a few µm 2 , creating micrometric stripes of different ion fluences. Raman spectroscopy has been extensively used to monitor the damage and the transformation of the diamond lattice after ion irradiation [24,25,27,29,[32][33][34][35][36][37]. Combined Raman and photoluminescence spectroscopy are very sensitive to the residual damage, as shown in our previous paper [37].…”

Section: Introductionmentioning

confidence: 93%

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Agulló-Rueda

Gordillo

Ynsa

et al. 2017

Carbon

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We have studied the radiation damage in diamond as a function of layer depth upon self-ion implantation with 9-MeV carbon ions and its recovery after annealing at 1000 • C. Raman and photoluminescence spectra show substantial damage of the lattice, namely, amorphization, neutral vacancies, and interstitial defects. Damage is maximum in the stopping layer at a depth of 4 µm. After annealing there is some recovery of the lattice, but the residual damage increases with fluence, up to about 2 × 10 16 ions/cm 2. At this fluence the stopping layer becomes highly disordered and does not heal with annealing. Surprisingly, for higher fluence values, of about 5 × 10 16 ions/cm 2 , there is almost no residual damage. After full amorphization is reached, the layers appear to recrystallize by solid phase epitaxy (SPE), using the pristine diamond layers underneath as a template. These results prove that graphitization of diamond after annealing can be avoided in deeply buried layers, implanted at fluences much higher than expected. High fluences, in fact, can lead to high quality diamond layers. If SPE can be confirmed, it would have a great interest for diamond device applications, as it allows for higher doping levels. ion irradiation 9-MeV C ions micro-spectroscopy 10 μm stopping layer Figure 1: Scheme of the experimental procedure. A diamond crystal was implanted with 9-MeV 12 C 3+ ions at different fluences and then annealed at 1000 • C for 1 h. Optical microspectroscopy measurements were performed both after implantation and after annealing. The inset shows an actual transmission light micrograph of an implanted stripe as seen from the top sample surface (fluence 130 × 10 14 ions/cm 3).

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Section: Introductionmentioning

confidence: 93%

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Agulló-Rueda

Gordillo

Ynsa

et al. 2017

Carbon

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“…A further increase in the neutron fluence (to 1 × 10 19 cm −2 and higher) leads to the disappearance of the diamond peak, notwithstanding that these fluences are two orders of magnitude below the critical dose of graphitization. In part, this is explained by the fact that the Raman cross-section in diamond is much lower than that in other allotropic forms of carbon [13,27].…”

Section: Raman Spectra Of Neutron-irradiated Diamondsmentioning

confidence: 99%

“…As the degree of RD increases, the relative intensity of the diamond peak decreases, and the defect band with the maximum near 1630 cm −1 and the spectral singularity near 1000 cm -1 broaden and are shifted to lower frequencies. More complete data on the Raman spectra behavior in diamonds implanted with MeV ions (He, Ni, Xe, or Kr) are given in References [13,14,21], respectively. The set of Raman bands and the general shape of the Raman spectra of the samples irradiated by fast neutrons and implanted with heavy MeV ions are preserved ( Figure 1 and References [13,14]).…”

Section: Raman Spectra Of Neutron-irradiated Diamondsmentioning

confidence: 99%

“…More complete data on the Raman spectra behavior in diamonds implanted with MeV ions (He, Ni, Xe, or Kr) are given in References [13,14,21], respectively. The set of Raman bands and the general shape of the Raman spectra of the samples irradiated by fast neutrons and implanted with heavy MeV ions are preserved ( Figure 1 and References [13,14]). Moreover, this observation is true to both natural and CVD diamonds.…”

Section: Raman Spectra Of Neutron-irradiated Diamondsmentioning

confidence: 99%

“…However, the application of this method for determining the composition of radiation defects and the RD level is difficult due to the limited set of experimental data and the absence of a unified approach to the interpretation of Raman an IR absorption spectra of RD diamond. Our earlier study of MeV implantation in natural diamonds [13,14] had shown that Raman scattering is a powerful technique for investigating and monitoring radiation-induced lattice modifications.…”

Section: Introductionmentioning

confidence: 99%

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Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

2020

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Disordering of crystal lattice induced by irradiation with fast neutrons and other high-energy particles is used for the deep modification of electrical and optical properties of diamonds via significant nanoscale restructuring and defects engineering. Raman spectroscopy was employed to investigate the nature of radiation damage below the critical graphitization level created when chemical vapor deposition and natural diamonds are irradiated by fast neutrons with fluencies from 1 × 1018 to 3 × 1020 cm−2 and annealed at the 100–1700 °C range. The significant changes in the diamond Raman spectra versus the neutron-irradiated conditions are associated with the formation of intrinsic irradiation-induced defects that do not completely destroy the crystalline feature but decrease the phonon coherence length as the neutron dose increases. It was shown that the Raman spectrum of radiation-damaged diamonds is determined by the phonon confinement effect and that the boson peak is present in the Raman spectra up to annealing at 800–1000 °C. Three groups of defect-induced bands (first group = 260, 495, and 730 cm−1; second group = 230, 500, 530, 685, and 760 cm–1; and third group = 335, 1390, 1415, and 1740 cm−1) were observed in Raman spectra of fast-neutron-irradiated diamonds.

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Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds

et al. 2019

Self Cite

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The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their hightemperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect.

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Raman Scattering in Natural Diamond Crystals Implanted with High-Energy Ions and Irradiated with Fast Neutrons

Cited by 17 publications

References 27 publications

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds

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