Raman Scattering Measurements in Neutron-Irradiated Silicon

Coeck, M.; Laermans, C.; Provoost, R; Silverans, R. E.

doi:10.4028/www.scientific.net/msf.258-263.623

Cited by 8 publications

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“…One of the reasons of the very small lattice expansion in silicon can be attributed to the estimation that the relative volume change per interstitial (DX i = +0.55) in silicon is only slightly in excess of that of a vacancy (DX v = À0.50) [27]. From Raman spectroscopy and X-ray diffraction, an amorphization of the crystal was clearly observed only in silicon as broad peaks at 17-27°by XRD and by Raman peaks at 480 cm À1 , which was assigned to an amorphous phase [28,29]. In silicon, an amorphous phase is formed as a result of neutron irradiation over a fluence of 10 25 n/ m 2 [29] besides vacancy clusters [30].…”

Section: Comparison Of Three Materialsmentioning

confidence: 96%

High-temperature neutron irradiation effects on CVD-diamond, silicon and silicon carbide

Yano

Sawabe

Yoshida

et al. 2009

Journal of Nuclear Materials

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Section: Comparison Of Three Materialsmentioning

confidence: 96%

High-temperature neutron irradiation effects on CVD-diamond, silicon and silicon carbide

Yano

Sawabe

Yoshida

et al. 2009

Journal of Nuclear Materials

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“…The expected result of this division is the absence of the peak in the Raman spectrum or its smoothing in order that the intensity of the spectrum in the region with ω > ω BP remain unchanged (I = const) [40]. From Fig.…”

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confidence: 92%

“…The position of the band maximum depends on the material (GaAs, 120 cm −1 ; Si, 114 cm −1 ; Si:H, 245 cm −1 ; and SiO 2 , 52 cm −1 ) and was attributed by some researchers to the mean size of disordering in the material ("correlation length") [40].…”

mentioning

confidence: 99%

“…where ν is the speed of sound in cBN and β is the coefficient of form for the disordering unit of different geometry (β = 0.5 for the disordering of linear form and β = 0.8 for the spherical form [40]), we found the correlation length σ (dimension of disordering) for the band at 535 cm −1 : σ 535 = 0.25 (linear form) and 0.36 nm (spherical form). The resulting dimensions of the σ disordering that can cause the appearance of the boson peak at 535 cm −1 lie within the limits of the interatomic spacings and are less in value than in glasslike materials (1-2 nm), which agrees well with experimental data.…”

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confidence: 99%

“…Boson peaks have been detected in the spectra of amorphous Si, Ge, GaAs, GaP, and quartz. A number of models were suggested to explain the nature of the defects that cause the appearance of boson peaks in the spectra of various materials [35][36][37][38][39][40]. The relation of the wide peaks in the Raman spectra of various materials to the presence of small regions of disordering in their lattices was discussed in [39,40].…”

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confidence: 99%

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Raman scattering of light in doped cubic boron nitride

Shishonok

2004

J Appl Spectrosc

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535.375:548The Raman spectra of single crystals of cubic boron nitride (cBN) doped with beryllium and also synthesized in the absence of dopants are investigated. It is shown that the wide bands at 215 and 535 cm −1 can be registered in the Raman spectra of the (1 _ 1 _ 1 _ ) faces of undoped cBN crystals and that the Be impurity penetrates into the cBN crystals predominantly in the direction of these faces. In the spectra of the investigated cBN samples doped with Be, the contour of the TO and LO phonon lines does not take the Fano shape, in contrast to diamond, which can point to an insufficient concentration of the dopant for attaining the Fano interference or to the absence of it in cBN. The wide bands have been investigated on the assumption that they are "boson"-like and result from small-size disorders in both undoped and doped cBN samples with the sp 3 bond deformed by Be.Keywords: Raman scattering, cubic boron nitride, beryllium, wide band, Fano profile, "boson"-like peak.Introduction. Cubic boron nitride (cBN) is the most wide-band semiconductor of those known and the nearest analog of diamond, surpassing the latter in its thermal, radiative, and chemical stability. In contrast to diamond, cBN can be doped with dopants of n and p types. Cubic boron nitride is of fundamental and practical interest as a material to be used in optoelectronics, electrons-emitting devices, and also for fabricating sensors operating in aggressive media and at high temperatures. The problem of introduction of a controlled impurity into cBN is urgent for this compound to be used in the practical applications named.Beryllium is used rather effectively for doping semiconductors and acts as an acceptor in Ge, Si, GaN, and SiC [1-4].Beryllium-doped cBN was synthesized [5,6] in the form of powders, single crystals, and polycrystals. Its electrophysical properties (volt-ampere-and C-V characteristics, Hall effect) were investigated. It has been established that in cubic boron nitride with different contents of impurity beryllium forms an acceptor level in the 0.25-1.03-eV region. In the EPR spectra of powders of cBN doped with Be a hyperfine structure was revealed in the form of a septet of lines with central signal with g = 2.0016. It is well known that the hyperfine structure mentioned may result from the interaction of unpaired s-electrons with the nucleus the spin of which is equal to 3/2. The nature of the observed paramagnetic defect is directly associated with an admixture of beryllium, since the spin of the Be atom nucleus is 3/2 [7].A number of works are now available in which an attempt was made to theoretically calculate the energy states of various defects in cBN, including vacancies, interstitial atoms, and some impurities, including beryllium [8][9][10][11][12][13][14].The Raman method used for identifying one phase of a substance or another and the quality of crystals is an effective method of studying stresses and the concentration of free carriers in them.At the present time, a vast amount of information has been obt...

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