Raman scattering on Mn or Co doped ZnO crystals

Jouanne, M.; Morhange, J. F.; Szuszkiewicz, W.; Golacki, Z.; Mycielski, A.

doi:10.1002/pssc.200564755

Cited by 16 publications

(13 citation statements)

References 16 publications

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“…The mode with the maximum at about 539 cm −1 is due to the Co doping, so either it is disorder-induced or a Co-related mode. Another structure which could be related to Co LVM is a small peak at about 557 cm −1 , reported previously in [16] (this structure does not appear both in pure ZnO and in Zn 1−x Mn x O mixed crystals). Moreover, one can expect the presence of the 552 cm −1 B 1 (high) normally silent mode, the activation of which has been predicted by theoretical calculations [17] as well as the A 1 (LO) and E 1 (LO) modes of pure ZnO which are situated in the spectral range 575-585 cm −1 .…”

Section: Methodssupporting

confidence: 56%

Raman Spectroscopy of Co-Doped ZnO Bulk Crystals

et al. 2007

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Section: Methodssupporting

confidence: 56%

Raman Spectroscopy of Co-Doped ZnO Bulk Crystals

et al. 2007

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“…Generally, this indicates the deterioration of the crystallinity [10]. However, the signal at 580 cm -1 , which was induced by lattice defects such as O vacancy, was relatively weak in all the samples [11,12]. This result suggests that lattice defects can be suppressed by thermal annealing below 550 °C.…”

Section: Resultscontrasting

confidence: 43%

Low temperature synthesis of ZnO thin films by spin‐coating technique

Hasuike

Tomoe

Kiyohara

et al. 2010

Phys. Status Solidi (c)

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ZnO thin films were prepared by sol‐gel spin‐coating method with thermal annealing in O2 atmosphere. The annealing temperature was varied in the range of 150 °C to 550°C. ZnO thin films with wurtzite structure were synthesized in all the samples. The sample annealed at low temperature showed the smooth surface morphology, and it gradually became rough with increase in annealing temperature. Finally, the sample had porous structure due to the aggregation of ZnO grain. As this result, the transmittance decreased in the visible region by annealing at high temperature. Furthermore, Raman analysis indicated that the lattice defects such as O vacancy could be suppressed by annealing at low temperature. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Compared with the spectrum of the reference ZnO thin film, two additional modes can be observed at 524 and 480 cm -1 in all ZnMnO films. Based on the published literature, the specific vibration modes can be found in the spectra of ZnO doped with the particular elements, such as the modes at 555 and 631 cm -1 for the Cu-and Gadoped ZnO, respectively [7]. Therefore, for our study the I Mn peak at 524 cm -1 should be the manganese related mode, which does not appear in the ZnO spectrum.…”

Section: Methodsmentioning

confidence: 98%

A study of the grain size and electric properties of Mn‐doped ZnO thin films grown by plasma‐assisted molecular beam epitaxy

Lin

Hong

et al. 2009

Phys. Status Solidi (c)

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In this study, we investigated the effect of manganese (Mn) doping on the grain size and electrical properties of Zn1‐xMnxO films grown on c ‐sapphire substrates by plasma‐assisted molecular beam epitaxy (PAMBE). Compared with the Raman spectra of reference ZnO films grown at the same conditions without Mn‐doping, the Mn related mode is observed and studied. The surface morphology and grain size were investigated by atomic force microscopy (AFM). The results show that the grains become smaller with increasing the Mn doping content. The electric properties including carrier concentration and mobility have been studied by Hall measurements. The decrease in mobility and the increase in resistivity of the samples with higher Mn doping content might be related to an increase of impurity scattering centers. The electric properties of the grain interior and grain boundary have been studied by using impedance spectroscopy (IS). Based on the IS data, we found that the relaxation time increases gradually with increasing Mn doping content. Besides, the activation energy for grain and grain boundary conduction are studied. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Raman scattering on Mn or Co doped ZnO crystals

Cited by 16 publications

References 16 publications

Raman Spectroscopy of Co-Doped ZnO Bulk Crystals

Raman Spectroscopy of Co-Doped ZnO Bulk Crystals

Low temperature synthesis of ZnO thin films by spin‐coating technique

A study of the grain size and electric properties of Mn‐doped ZnO thin films grown by plasma‐assisted molecular beam epitaxy

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