Raman scattering study of lead zirconate titanate thin films prepared on silicon substrates by radio frequency magnetron sputtering

Taguchi, Isao; Pignolet, A.; Wang, L.; Proctor, M.; Lévy, F.; Schmid, P. E.

doi:10.1063/1.355103

Cited by 33 publications

(12 citation statements)

References 36 publications

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“…It is also a nondestructive method without any contact to samples, and therefore ideal for the study of films already incorporated into devices. However, although Raman scattering has been extensively used in studies of physical properties and characterizations of PZT ceramics [3][4][5] and thin films, 6,7 only little has been addressed to the domain studies in PZT. We are only aware of one polarized Raman study of epitaxial PZT film ͑x = 0.4͒, 8 which has demonstrated Raman selection rules in c and a domains.…”

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confidence: 99%

Domain distributions in tetragonal Pb(Zr,Ti)O3 thin films probed by polarized Raman spectroscopy

Osada

Nishida

Wada

et al. 2005

Applied Physics Letters

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We have investigated polarized Raman spectra of (001)/(100)-oriented tetragonal epitaxial Pb(ZrxTi1−x)O3 (PZT) thin films (x=∼0.35) in which the volume fraction of the polar c domain is systematically varied from 4% to 96%. From polarization analyses using high epitaxial quality films, we have successfully isolated the A1 and B1 phonons from the E phonons, thus offering a distinctive evaluation of the c domains. As increasing c-domain volume, the A1(TO) modes linearly increase in their intensity. A remarkable correlation is found between the A1(1TO)-mode intensity and the c-domain volume for PZT films. We suggest that this correlation as well as the A1(1TO)-mode intensity provide a simple and useful probe for characterization of c-domain volume and ferroelectric properties in PZT-based devices.

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confidence: 99%

Domain distributions in tetragonal Pb(Zr,Ti)O3 thin films probed by polarized Raman spectroscopy

Osada

Nishida

Wada

et al. 2005

Applied Physics Letters

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“…[20][21][22] The lower frequency broad peak at ~280 cm −1 was attributed to the O-Ti-O bending vibration. It can be seen in the figures that the profile of the very broad peak at ~570 cm −1 for unseeded PZT sample remarkably changes to a sharp peak with increasing BT seed concentration.…”

Section: Resultsmentioning

confidence: 99%

The Seeding Effects on the Phase Transformation of Sol-Gel Derived PZT Powder

2002

Bulletin of the Korean Chemical Society

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The formation temperature for the perovskite lead zirconate titanate [Pb(Zr,Ti)O 3 , PZT] derived from sol-gel route was lowered by more than 100 o C with the addition of crystallographically suitable seed particles, such as barium titanate (BT) or PZT. We investigated the effect of seeding on the crystallization of perovskite phase and on the microstructure of the sol-gel derived PZT powder by varying the concentration, size and chemical species of seed particles. The phase transition as a function of temperature was monitored by DTA, XRD, and Raman spectroscopy, and the interface between the seed particle and grown PZT layer was analyzed by SEM and high resolution TEM techniques. It was found that both the heterogeneous and homogeneous nucleation contributes competitively in the formation of perovskite PZT grains.

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“…Experimental lattice constants and c/a ratios for PZT at 25 °C [ 47 ] and 400 °C were used for the tetragonal and cubic phases, respectively. The interfacial system was constructed by combining 1 × 1 × 3 supercell of the PZT and Pt or Pt 3 Pb slabs for Ti-terminated interfaces and 1 × 1 × 4 supercell of that for (Pb,O)-terminated interfaces.…”

Section: Methodsmentioning

confidence: 99%

Combined Experimental and Computational Methods Reveal the Evolution of Buried Interfaces during Synthesis of Ferroelectric Thin Films

Jones

LeBeau

Nikkel

et al. 2015

Adv Materials Inter

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(1 of 10) 1500181 wileyonlinelibrary.com IntroductionFerroelectric thin fi lms have broad application in society ranging from nonvolatile memories to microrobotics and integrated capacitors. As the sizes of devices and the thicknesses of fi lms decrease, the specifi c surface and interfacial areas increase signifi cantly. At these progressively smaller length scales, interfacial phenomena such as interdiffusion and interface reactions are promoted and can have benefi cial or deleterious consequences on the resultant fi lm and device properties and functionality. [1][2][3][4] Thus, an understanding of interfacial phenomena between dissimilar materials is of paramount importance in materials and devices of small length scale.Solution-based chemical routes have become effective for the synthesis of ferroelectric lead zirconate titanate (PZT) thin fi lms on diverse substrates. [5][6][7][8] In these routes, a solution is spin cast on a substrate and then subsequently heated to induce crystallization of the ferroelectric fi lm. For Pb-based ferroelectric fi lms Understanding interfaces between dissimilar materials is crucial to the development of modern technologies, for example, semiconductor-dielectric and thermoelectric-semiconductor interfaces in emerging electronic devices. However, the structural characterization of buried interfaces is challenging because many measurement techniques are surface sensitive by design. When interested in interface evolution during synthesis, the experimental challenges multiply and often necessitate in situ techniques. For solution-derived lead zirconate titanate (PZT) ferroelectric thin fi lms, the evolution of buried interfaces during synthesis (including dielectricmetal and metal-metal) is thought to dramatically infl uence the resultant dielectric and ferroelectric properties. In the present work, multiple experimental and computational methods are combined to characterize interface evolution during synthesis of ferroelectric PZT fi lms on platinized Si wafers-including in situ X-ray diffraction during thermal treatment, aberration-corrected scanning transmission electron microscopy of samples quenched from various synthesis states, and calculations using density functional theory. Substantial interactions at buried interfaces in the PZT/Pt/Ti/SiO x /Si heterostructure are observed and discussed relative to their role(s) in the synthesis process. The results prove that perovskite PZT nucleates directly from the platinum (111)-oriented bottom electrode and reveal the roles of Pb and O diffusion and intermetallic Pt 3 Pb and Pt 3 Ti phases.

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Raman scattering study of lead zirconate titanate thin films prepared on silicon substrates by radio frequency magnetron sputtering

Cited by 33 publications

References 36 publications

Domain distributions in tetragonal Pb(Zr,Ti)O3 thin films probed by polarized Raman spectroscopy

Domain distributions in tetragonal Pb(Zr,Ti)O3 thin films probed by polarized Raman spectroscopy

The Seeding Effects on the Phase Transformation of Sol-Gel Derived PZT Powder

Combined Experimental and Computational Methods Reveal the Evolution of Buried Interfaces during Synthesis of Ferroelectric Thin Films

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