Raman scattering study of photoluminescent spark-processed porous InP

Rojas-López, M.; Nieto-Navarro, J.; Rosendo, E.; Navarro‐Contreras, H.; Vidal, M. A.

doi:10.1016/s0040-6090(00)01565-0

Cited by 39 publications

(19 citation statements)

References 14 publications

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“…It also shows that a broad Raman peak exists at approximately 495 cm À1 and is attributed to phonons associated with the bccstructured In 2 O 3. [27,28] Particularly, the In thin-film sample processed for 12 hours shows clear peaks at 365 and~496 cm À1 and proves the cubic phase of the films, which is in good accordance with the XRD results. But the peak observed at 365 cm À1 is identified also with the film processed for 5 hours.…”

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confidence: 84%

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Synthesis of In2O3 Thin Films from Indium Thin Film by Hot-Water Oxidation Method

Shanmugan

Devarajan

2011

Metall Mater Trans A

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Radio-frequency (RF)-sputtered indium thin films were prepared and processed in ultrapure water at 368 K (95°C) for various time durations. The processed samples were poor in crystalline quality and indexed as cubic phase for the samples processed for more than 12 hours. A rhombohedral to cubic phase was also observed. Photoluminescence (PL) and Raman spectra showed few dominant peaks at~385,~515, and~675 and at 203 and 495 cm À1 as oxygen deficient cubic In 2 O 3 with nanostructured In 2 O 3 , respectively.

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confidence: 84%

“…Moreover, a Raman peak centered at 208 cm À1 for the film processed for 12 hours reveals the possibility in the formation of hydroxyl group (In(OH) 3 ) during the process time. [27] But no more peaks other than indium and In 2 O 3 have been observed in XRD studies.…”

mentioning

confidence: 97%

Synthesis of In2O3 Thin Films from Indium Thin Film by Hot-Water Oxidation Method

Shanmugan

Devarajan

2011

Metall Mater Trans A

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“…Figure 2 shows the Raman spectra for one of the films grown with an incompletely nitrided target. The feature at 495 cm --1 is due to In 2 O 3 [5] while the broad peak at approximately 1590 cm --1 may include an In 2 O 3 phonon response known to be occur at approximately that wavenumber, however a large carbon contribution is also present in that band. It was found that the intensity of the carbon peak at 1590 cm --1 increased substantially over time, the growth of carbon in the film was confirmed by SIMS and appears to be due to adventious atmospheric hydrocarbons settling in the large voids that are known to be present for material grown from an un-nitrided indium target [4].…”

Section: Methodsmentioning

confidence: 97%

Ultraviolet Raman and Optical Transmission Studies of RF Sputtered Indium Nitride

Butcher

Dou

Goldys

et al. 2002

phys. stat. sol. (c)

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PACS : 78.30.Fs; 78.66.Fd; 81.15.Cd UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band-gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex-situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.

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“…A compilation of the literature values of the vibrational modes for InP oxides and hydrides is listed in Table II. [33][34][35][36][37][38][39][40] and Table III. [41][42][43][44] The most intense peaks are marked with a star symbol.…”

Section: Methodsmentioning

confidence: 99%

Interfacial Chemistry of InP/GaAs Bonded Pairs

Liu

Kuech

2007

Journal of Elec Materi

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The interfacial chemistry of InP/GaAs direct bonding with either 5% HF in water or HF:ethanol (1:9) chemical pretreatments was investigated. Multiple internal transmission-Fourier transform infrared spectroscopy (MIT-FTIR) and atomic force microscopy (AFM) were used to probe the bonding interface. The bond strength was measured as a function of annealing conditions and prebonding chemical treatment. The HF-based pretreatments remove the initial native oxide, leaving an interfacial layer of either water or ethanol. The initial room-temperature bond strength is primarily determined by the strength of hydrogen bonding, which, in turn, is a function of the prebonding treatment. The removal of interfacial water and ethanol, and with the subsequent formation of the oxide layer, leads to an increased bond strength. For ethanol-based HF treatments, ethanol appears to react with the underlying interfacial oxide layer through a complex interaction with the absorbed water. After annealing, the bond strength for all prebonding preparations can reach a high value, comparable to the fracture strength of the InP. The oxide composition after thermal annealing shifts from In 2 O 3 to the eventual thermodynamic equilibrium product, InPO 4 .

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Raman scattering study of photoluminescent spark-processed porous InP

Cited by 39 publications

References 14 publications

Synthesis of In2O3 Thin Films from Indium Thin Film by Hot-Water Oxidation Method

Synthesis of In2O3 Thin Films from Indium Thin Film by Hot-Water Oxidation Method

Ultraviolet Raman and Optical Transmission Studies of RF Sputtered Indium Nitride

Interfacial Chemistry of InP/GaAs Bonded Pairs

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