PtS2 is a newly developed group 10 2D layered material
with high carrier mobility, wide band gap tunability, strongly bound
excitons, symmetrical metallic and magnetic edge states, and ambient
stability, making it attractive in nanoelectronic, optoelectronic,
and spintronic fields. To the aim of application, a large-scale synthesis
is necessary. For transition-metal dichalcogenide (TMD) compounds,
a thermally assisted conversion method has been widely used to fabricate
wafer-scale thin films. However, PtS2 cannot be easily
synthesized using the method, as the tetragonal PtS phase is more
stable. Here, we use a specified quartz part to locally increase the
vapor pressure of sulfur in a chemical vapor deposition furnace and
successfully extend this method for the synthesis of PtS2 thin films in a scalable and controllable manner. Moreover, the
PtS and PtS2 phases can be interchangeably converted through
a proposed strategy. Field-effect transistor characterization and
photocurrent measurements suggest that PtS2 is an ambipolar
semiconductor with a narrow band gap. Moreover, PtS2 also
shows excellent gas-sensing performance with a detection limit of
∼0.4 ppb for NO2. Our work presents a relatively
simple way of synthesizing PtS2 thin films and demonstrates
their promise for high-performance ultrasensitive gas sensing, broadband
optoelectronics, and nanoelectronics in a scalable manner. Furthermore,
the proposed strategy is applicable for making other PtX2 compounds and TMDs which are compatible with modern silicon technologies.