Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame

Wolter, Scott D.; Prater, J. T.; Sitar, Zlatko

doi:10.1016/s0022-0248(01)01274-x

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Cited by 6 publications

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“…This indicates that the advantage of single crystal diamond is not exerted. The crystal quality of the single crystal diamond need to be further improved [8] . An insight of the performance's key influence factors of hydrogen-terminated diamond FETs needs to be provided.…”

Section: Introductionmentioning

confidence: 99%

Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

et al. 2020

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In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I–V characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.

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Section: Introductionmentioning

confidence: 99%