Raman Spectroscopy of Graphene and Bilayer under Biaxial Strain: Bubbles and Balloons

Jakob, Zabel; Nair, R. R.; Ott, A. K.; Georgiou, Thanasis; Geǐm, A. K.; Новоселов, К. С.; Casiraghi, Cinzia

doi:10.1021/nl203359n

Cited by 458 publications

(569 citation statements)

References 47 publications

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“…Typically, compressive biaxial strain leads to a phonon hardening (blue shift) for single-crystal graphene, while tension leads to phonon softening (red shift). 10,11 In our experiments, the 2D peaks also show blue-shifted characteristics under compressive strain. Negative voltages also give rise to the left shifts of (002) peaks in the XRD patterns shown in Fig.…”

supporting

confidence: 60%

“…[24][25][26] In this work, we use the Gr€ uneisen parameter for 2D band derived from the shift of Raman peak by Zabel et al to be 2.6 6 5%. 11 This value is in good agreement with the Gr€ uneisen parameter (2.7) calculated from first principles by Mohiuddin et al 9 Herein, we obtain the actual strain applied to the graphene to be about À0.011% per 100 V. Note that such strain magnitude is much smaller than that of the PMN-PT (À0.04%) based on the aforementioned XRD result, suggesting that the piezoelectric-induced in-plane strain might have not been completely transferred to the graphene sheet. This may be mainly attributed to the extremely high stiffness of graphene and the inefficient interfacial strain transfer.…”

Section: -2mentioning

confidence: 99%

“…9 Comparatively, biaxial strain is more suitable to study the strain effects on the vibrational properties. [10][11][12] Nevertheless, previous investigations of biaxial strain focused mainly on the mechanically exfoliated graphene (i.e., single-crystal graphene). Generally, chemical vapor deposition (CVD) synthesized large-area graphene sheets are polycrystalline and usually continuous, which are of great interest for industrial scale applications.…”

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confidence: 99%

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Effects of controllable biaxial strain on the Raman spectra of monolayer graphene prepared by chemical vapor deposition

Jie¹,

Hui²,

Zhang³

et al. 2013

Applied Physics Letters

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Controllable biaxial strain is delivered to monolayer graphene prepared by chemical vapor deposition via applying an electric field to the underlying piezoelectric [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 substrate. The effects of tunable strain on the Raman spectra of graphene are investigated in reversible and real-time manners. Such strain can result in a blue shift in 2D band of graphene. The calculations based on the Grüneisen parameter identify the actual biaxial strain to graphene, leading to a continuous 2D band shift, which is detected during the retention of bias voltage. The physical mechanism behind this unique Raman behavior is discussed.

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confidence: 60%

Section: -2mentioning

confidence: 99%

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confidence: 99%

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Effects of controllable biaxial strain on the Raman spectra of monolayer graphene prepared by chemical vapor deposition

Jie¹,

Hui²,

Zhang³

et al. 2013

Applied Physics Letters

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“…70, it was clearly presented that under biaxial strain conditions, when the position of the G band in bilayer graphene is rising, the position of the 2D band is also increased. This is in contrast to the step edges, where an observable blue-shift of the 2D band is followed by a redshift of the G band (Figs.…”

Section: -5mentioning

confidence: 99%

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

Ciuk

Çakmakyapan

Özbay

et al. 2014

Journal of Applied Physics

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The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ∼ 10? nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ∼ 190? Ωμ m for step height hS? =? 10? nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications. © 2014 AIP Publishing LLC

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“…mechanism as can be seen by the downshift observed on both the G and 2D modes for the two types of heterostructures [42,43].…”

Section: Resultsmentioning

confidence: 77%

Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

Arezki

Boutchich

Alamarguy

et al. 2016

J. Phys.: Condens. Matter

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Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω/sq to 1260 Ω/sq for the (p)-aSi:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm²/Vs indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or displays applications.

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Raman Spectroscopy of Graphene and Bilayer under Biaxial Strain: Bubbles and Balloons

Cited by 458 publications

References 47 publications

Effects of controllable biaxial strain on the Raman spectra of monolayer graphene prepared by chemical vapor deposition

Effects of controllable biaxial strain on the Raman spectra of monolayer graphene prepared by chemical vapor deposition

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

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