2010
DOI: 10.1088/0953-8984/22/33/334204
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Raman study of ion-induced defects inN-layer graphene

Abstract: Raman scattering is used to study the effect of low energy (90 eV) Ar(+) ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm(-1)) and the disorder-induced D band (1345 cm(-1)) with ion fluence is determined for mono-, bi-, tri- and ∼50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar(+) ions in AB Bernal stacked graphite, and how they affect the graphene sheets.… Show more

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Cited by 129 publications
(97 citation statements)
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“…At large L D (small Φ), the ratio I D /I G increases with decreasing L D , passes through a maximum and then rapidly decreases. Such non-monotonic behavior is common for many experimental observations [5][6][7][8][9] and agrees with the theoretical model 13 based on the assumption that a single ion impact leads to the formation of a defect characterized by two length scales r S and r A (r A > r S ), which are the radii of two circular areas surrounding the defect (see insert in Fig. 5).…”
Section: Fig 3 (Color Online)supporting
confidence: 87%
See 1 more Smart Citation
“…At large L D (small Φ), the ratio I D /I G increases with decreasing L D , passes through a maximum and then rapidly decreases. Such non-monotonic behavior is common for many experimental observations [5][6][7][8][9] and agrees with the theoretical model 13 based on the assumption that a single ion impact leads to the formation of a defect characterized by two length scales r S and r A (r A > r S ), which are the radii of two circular areas surrounding the defect (see insert in Fig. 5).…”
Section: Fig 3 (Color Online)supporting
confidence: 87%
“…The measurement of the Raman scattering (RS) spectra is considered an effective tool for probing the structure of disordered graphene and the density of introduced defects [5][6][7][8] . Typical RS spectra for disordered graphene consist of three main lines.…”
Section: Introductionmentioning
confidence: 99%
“…The Raman relaxation length for the disorder-induced Raman scattering process in graphene was also established in these experiments, and 2 nm [82] was found, a value that is at least 10 times more accurate than the values previously published in the literature [84,85]. This work was extended to study the effect of low-energy (90 eV) Ar + ion bombardment in graphene samples as a function of the number of layers [86,87]. In sequence, the I D /I G dependence on the excitation laser energy E laser , already established for nanographite [88,89], was extended to point defects in graphene [90], thus providing a formula for quantifying the amount of defects in graphene for any excitation laser energy.…”
Section: Pushing the Limits Of Raman Spectroscopy Applications On Sp mentioning
confidence: 52%
“…The first-order Raman spectrum of (a) crystalline graphene, (b) defective graphene and (c) highly disordered single-layer graphene deposited on a SiO 2 substrate. These spectra are all obtained with E laser = 2.41 eV (Jorio et al 2010a). high symmetry, are highly sensitive to symmetry-breaking defects. Disorder and symmetry breaking are observed sensitively by spectroscopy, which depends strongly on crystal symmetry (Ashcroft & Merman 1976;Kittel 1986).…”
mentioning
confidence: 99%