Raman study of the network disorder in sputtered and glow discharge <i>a</i>-Si:H films

Morell, Gerardo; Katiyar, Ram S.; Weisz, S. Z.; Jia, Hao; Shinar, J.; Balberg, I.

doi:10.1063/1.359743

Cited by 57 publications

(40 citation statements)

References 31 publications

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“…On the other hand, hydrogen dissociation at higher temperature removes its strain relieving effect from the Si network. 19 Results from SIMS confirmed a much lower level of H content in the film grown at 374°C or above. 20 As the growth temperature increases, an increasing trend from 477.3 cm Ϫ1 at 98°C to 490.6 cm Ϫ1 at 493°C for TO also indicates diminishing disorder in the deposited films.…”

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confidence: 53%

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Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy

Tay¹,

Lockwood²,

Baribeau³

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy Tay, L.; Lockwood, D. J.; Baribeau, J. -M.; Wu, X.; Sproule, G. I.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744851&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744851&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1116/1.1676345 Science and Technology A, 22, 3, pp. 943-947, 2004 Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy Silicon films were deposited by molecular beam epitaxy onto crystalline silicon (c-Si) and native oxide on c-Si ͑001͒ substrates at temperatures ranging from 98 to 572°C. Raman spectroscopy of these films showed that both the short-range disorder and intermediate-range disorder decreases as the deposition temperature increases. The onset of a phase transition in the amorphous Si films can be effectively identified by the appearance of the polycrystalline and crystalline Si Raman bands, which allowed quantification of the crystalline volume fractions present. Both the transmission electron microscopy and Raman results confirmed that films grown on the amorphous substrates at temperatures less than 414°C are entirely amorphous, but exhibit c-Si features at higher temperatures. Films grown on c-Si substrates exhibit a characteristic limiting thickness for epitaxy and the transformation of the resulting upper amorphous layer into crystalline...

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confidence: 53%

“…A similar effect has been observed in glow discharge and sputter deposited Si films. 19 This is due to the contributions from two opposing factors. As the temperature increases, the higher mobility of Si atoms improves the network relaxation.…”

mentioning

confidence: 99%

Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy

Tay¹,

Lockwood²,

Baribeau³

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…Our own measurements of a-Si: H samples without substrate indicate that a good estimation is 33Ϯ 3 cm −1 . Although wider Raman spectra have been reported in literature, we should keep in mind that macroscopic stress due to the substrate 17 as well as film inhomogeneity 18 tend to increase ͑⌫ / 2͒. Our estimation allows us to plot the result of Schulke in Fig.…”

Section: B Comparison With Experimentsmentioning

confidence: 99%

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

Roura¹,

Farjas²,

Cabarrocas³

2008

Journal of Applied Physics

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A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si,⌬ , and the width of the transverse optical Raman peak, ⌫, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for ⌬ and ⌫ are used. This reduced dispersion in the predicted values of ⌬ together with the broad agreement with the scarce direct determinations of ⌬ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si.

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“…The values of ⌬ from 11.9°to 16.1°fall within the range for various a-Si films measured by Raman spectroscopy. 29 None of the SW models approach the almost-perfect fourfold coordination of the real material, which as mentioned above, reflects the synthesis by quenching from the melt with the SW potential. The high density of coordination defects, particularly overcoordination, also explains the deviation of from the tetrahedral value of 109.47°.…”

Section: A Short Range Ordermentioning

confidence: 99%

Structure and physical properties of paracrystalline atomistic models of amorphous silicon

Voyles

Zotov

Nakhmanson

et al. 2001

Journal of Applied Physics

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We have examined the structure and physical properties of paracrystalline molecular dynamics models of amorphous silicon. Simulations from these models show qualitative agreement with the results of recent mesoscale fluctuation electron microscopy experiments on amorphous silicon and germanium. Such agreement is not found in simulations from continuous random network models. The paracrystalline models consist of topologically crystalline grains which are strongly strained and a disordered matrix between them. We present extensive structural and topological characterization of the medium range order present in the paracrystalline models and examine their physical properties, such as the vibrational density of states, Raman spectra, and electron density of states. We show by direct simulation that the ratio of the transverse acoustic mode to transverse optical mode intensities I TA /I TO in the vibrational density of states and the Raman spectrum can provide a measure of medium range order. In general, we conclude that the current paracrystalline models are a good qualitative representation of the paracrystalline structures observed in the experiment and thus provide guidelines toward understanding structure and properties of medium-range-ordered structures of amorphous semiconductors as well as other amorphous materials.

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Raman study of the network disorder in sputtered and glow discharge a-Si:H films

Cited by 57 publications

References 31 publications

Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy

Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

Structure and physical properties of paracrystalline atomistic models of amorphous silicon

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