Random addressable 2048×2048 active pixel image sensor

Scheffer, Danny; Dierickx, B.; Meynants, Guy

doi:10.1109/16.628827

Cited by 90 publications

(27 citation statements)

References 3 publications

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“…The charge collection device is in general an N Well/P-epi diode. The bias device of the charge collection diode can be a P+/N-Well diode (called Self-Bias -SB) or a diode-connected NMOS transistor (called "logarithmic bias" from visible light sensors -LOG) [7].…”

Section: A Description Of the Pixelsmentioning

confidence: 99%

A digital Monolithic Active Pixel Sensor chip in a Quadruple-Well CIS process

Değerli

Bertolone

Claus

et al. 2012

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

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A CMOS sensor chip for charged particle detection has been developed and submitted for fabrication in a 0.18 m Quadruple-Well (N&P-Wells, Deep N&P-Wells) CMOS Image Sensor (CIS) process. Improvement of the radiation hardness, the readout speed and the power dissipation of the mainstream CMOS sensors is expected with the exploration of this process. In order to ensure better charge collection and neutron tolerance, wafers with high-resistivity epitaxial layer have been chosen. The chip comprises several sub-chips, and in this paper one of them, a digital CMOS sensor prototype developed in order to validate the key analog blocs (from sensing element to I-bit digital conversion) of a binary MAPS in this process will be presented. The digital sensor prototype comprises four different sub-arrays of 20 �m pitch 64x32 pixels, 128 column-level auto-zeroed discriminators, a sequencer and an output digital multiplexer. Laboratory tests results including the charge-to-voltage conversion factor, the charge collection efficiency, the temporal noise and the fixed-pattern noise are presented in details. A 55 Fe source is used for calibration of pixels. Some irradiation resultswill also be given.

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Section: A Description Of the Pixelsmentioning

confidence: 99%

A digital Monolithic Active Pixel Sensor chip in a Quadruple-Well CIS process

Değerli

Bertolone

Claus

et al. 2012

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

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“…The reliability issue may restrict the applications of this diode. The quantum efficiency of the photodiode processed in a CMOS process is 25-30% [6]. Due to the depletion closer to the surface and transparent ITO gate, the quantum efficiency of our diode is estimated about 80% (the inset of Fig.…”

Section: Device Operationmentioning

confidence: 99%

A novel photodetector using MOS tunneling structures

Liu

Lee

et al. 2000

IEEE Electron Device Lett.

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A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm 2 . As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.Index Terms-MOS tunneling diode, photodetector, rapid thermal oxide.

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“…Logarithmic photoreceptor (see [2] [3] [5] [10]) presents two major drawbacks: 1° poor sensibility; 2° its large fixed pattern noise (FPN), it's very difficult to cancel, even off-chip, due to its nonlinear transformation.…”

Section: Adaptive Photoreceptormentioning

confidence: 99%

Analog multimode visual feature extraction retina

Ni¹,

Guan²

1998

SPIE Proceedings

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We propose a multimode retina integrating image sensing, normalization, smoothing, differentiation and visual feature extraction by incorporating: 1) a histogram equalization function onto the sensor focal plane, which normalizes the image signal at the same dynamic range under different illumination conditions and results a constant signal amplitude facilitating the post processing; 2) a capacitive Gaussian network and a spatial differentiator, which offer a bandpass filtering on the normalized image; 3) a visual feature extraction, which extracts and localizes the areas enveloping objets of interest.This novel multimode retina, when interfaced with a digital processing unit, does a first step processing and information salient region extraction suited for many real-time vision tasks.

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Random addressable 2048×2048 active pixel image sensor

Cited by 90 publications

References 3 publications

A digital Monolithic Active Pixel Sensor chip in a Quadruple-Well CIS process

A digital Monolithic Active Pixel Sensor chip in a Quadruple-Well CIS process

A novel photodetector using MOS tunneling structures

Analog multimode visual feature extraction retina

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