Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering

Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs

“…In Fig. 11 the analytic short-range model adopted in [40] is Fig. 12 Comparison of Simulated Rutherford scattering where the interaction is defined via the analytic short-range model of [40] or the density gradient effective quantum potential compared with the effective quantum potential solution associated with a point charge and shows very close agreement when a mesh spacing of 1 nm or smaller is used.…”

“…11 the analytic short-range model adopted in [40] is Fig. 12 Comparison of Simulated Rutherford scattering where the interaction is defined via the analytic short-range model of [40] or the density gradient effective quantum potential compared with the effective quantum potential solution associated with a point charge and shows very close agreement when a mesh spacing of 1 nm or smaller is used. This similarity between the DG effective quantum potential and the analytic short-range model hints at the suitability to simultaneously include quantum corrections and short-range electron-impurity interactions from the mesh resolved quantum potential alone.…”

“…This direct scattering of carriers from Coulomb centres was successfully implemented by a number of groups using the particle-particle particle-mesh (P 3 M) approach [37][38][39][40] Fig. 11 Comparison of the density gradient effective quantum potential surrounding an ionised impurity with the analytic short-range potential used for carrier-ion interactions in [40] with short-range potential corrections [38,40], where the corrections minimised errors in particle propagation. In Fig.…”

Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis

“…In contrast, FinFETs and FD SOI transistorts tolerate low channel doping, practically eliminating the RDD effects, and dramatically reducing the statistical variability [16] [17]. [28], the σV T scattering cannot completely describe the I ON variation behavior. This is mainly because of transport variation due to dopants induced current percolation paths [29], and source/drain resistance variation due to the dopant number variation in the extensions [30] [31].…”

Interpretation of MOS transistor mismatch signature through statistical device simulations

“…Although it is widely published that a Monte Carlo simulation approach yields the best accuracy, especially for very short transistors, the time needed to complete a simulation can be very long. Several attempts of using MC simulations for statistical variability have been reported [13], but those studies all analyze extremely small transistors. In this study, several, relatively large device sizes of a technology have been simulated.…”