Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit

Abstract

Within the framework of the thermally activated process of the flux line or flux line bundles, and by time integration of the 1D equation of motion of the circulating current density J (ρ, t), which is suitable for thin superconducting films (R d, λ), we present numerical calculations of the current profiles, magnetization hysteresis loops and ac susceptibility χ n = χ n + iχ n for n = 1, 3 and 5 of a thin disc immersed in an axial time-dependent external magnetic field B a (t) = B dc + B ac cos(2πνt). Our calculated results are compared with those of the critical state model (CSM) and found to prove the approximate validity of the CSM below the irreversibility field. The differences between our computed results and those of the CSM are also discussed.

Effect of Parasitic Channel on DC/AC/RF Characteristics and Power Consumption of GAA Si NS MOSFETs and Circuits

“…In this simulation, we utilized a calibrated mobility model, in particular, we intensively employed 3-D quantum mechanically corrected device simulations to evaluate device characteristics [35]. For validation purposes, we examined the conduction band energy and electron density along the channel during on and off states by numerically solving the 3-D density gradient equation along with drift-diffusion (DG+DD) and nonequilibrium Green's functions (NEGF) models [36][37][38][39]. Not shown here, but by adjusting the electron effective mass, the simulation results of the DG+DD model are in good agreement with those of the NEGF model [40].…”