Impact of Random Interface Traps and Random Dopants in High-&lt;formula formulatype="inline"&gt;&lt;tex Notation="TeX"&gt;$k$ &lt;/tex&gt;&lt;/formula&gt;/Metal Gate Junctionless FETs

Wang, Yijiao; Huang, Peng; Wei, Kai; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Zhang, Xing; Kang, Jinfeng

doi:10.1109/tnano.2014.2312482

Cited by 7 publications

(2 citation statements)

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“…In addition, there is a contrast between the trend of V TH variation and DIBL. The V TH variation induced by traps also results in an increment in SS, which can resist the DIBL according to the research [11]. The channel bottom location '7' is used to characterize the trap location sensitivity along the channel length direction.…”

Section: Resultsmentioning

confidence: 99%

“…The gate-all-around field-effect transistor (GAAFET) has become the prime candidate due to its superior electrostatic integrity and ability to satisfy higher performance requirements [4][5][6]. With continuous device scaling, the impact of process fluctuations, including random dopant fluctuation (RDF) [7][8][9], work-function variation (WFV) [9,10], interface trap fluctuation (ITF) [11,12] and oxide thickness variation (OTV) [13], has become more serious and have been widely studied in planar and multi-gate devices. These process variation sources could lead to significant variability in the critical electrical parameters, such as threshold voltage (V TH ), subthreshold slope (SS), on-state current (I ON ), off-state current (I OFF ), etc.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Sun

Zhuo

et al. 2021

Semicond. Sci. Technol.

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An investigation into the intrinsic process variations including random dopant fluctuation (RDF), interface trap fluctuation, work-function variation (WFV) and oxide thickness variation was undertaken in a vertically stacked gate-all-around nanowire transistor. The fluctuation of the electrical characteristics induced by different sources of variation was discussed. The impact of process variations on static random access memory (SRAM) was also studied. On-state current I ON could be affected by RDF in the source and drain region and the standard deviation can reach 17.2% of the median. WFV can cause obvious fluctuations in threshold voltage V TH and consequently in the read static noise margin (RSNM) of SRAM. It has been discovered that the RSNM was deteriorated by 6.8% by WFV, which causes great uncertainty among all variation sources.

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Section: Resultsmentioning

confidence: 99%