2016 International Conference on Microelectronic Test Structures (ICMTS) 2016
DOI: 10.1109/icmts.2016.7476172
|View full text |Cite
|
Sign up to set email alerts
|

Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Abstract: Using the developed array test circuit, both static and temporal electrical characteristics of over million transistors/shot were measured with the accuracy of 60 ~Vrms to analyze and reduce random telegraph noise (RTN) toward high SIN CMOS image sensors. Statistical evaluation results of RTN parameters such as time constants and amplitude and their behaviors toward transistor device structures and operation conditions are summarized. Application to high SIN CMOS image sensor is also described.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
4
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 15 publications
(4 citation statements)
references
References 35 publications
0
4
0
Order By: Relevance
“…Figure 3 shows a circuit schematic diagram of the newly developed platform. The platform employs architectures of an array test circuit [45][46][47][48][49][50] to achieve a high-speed measurement with a large number of DUTs. The arrayed DUTs are selected by vertical and horizontal shift resisters (VSR and HSR).…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Figure 3 shows a circuit schematic diagram of the newly developed platform. The platform employs architectures of an array test circuit [45][46][47][48][49][50] to achieve a high-speed measurement with a large number of DUTs. The arrayed DUTs are selected by vertical and horizontal shift resisters (VSR and HSR).…”
Section: Experimental Methodsmentioning
confidence: 99%
“…To fully understand the RTN, it is necessary to characterize the statistical distributions, emission-capture time constants, activation energies, noise power spectra densities, physical locations, and the relations to detailed fabrication processes. In spite of being studied in the past several decades [ 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ], many RTN-related issues still remain as active research topics due to the nature of its complexity.…”
Section: Introductionmentioning
confidence: 99%
“…In this sensor, random telegraph noise (RTN) occurred on the source follower in the pixel because of the shrinkage of the MOSFET used in the source follower. [20][21][22][23][24][25] RTN generated noise after offset subtraction, as shown in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%